SYSTEM AND METHOD FOR MONITORING IN REAL TIME THE OPERATING STATE OF AN IGBT DEVICE
First Claim
1. A system for determining at least one of a junction temperature and a remaining lifetime of an IGBT device, comprising:
- a differential unit configured to receive a gate-emitter voltage characteristic of the IGBT device to be measured, and to differentiate the gate-emitter voltage characteristic to obtain pulses correlating with edges formed by a Miller plateau phase during a switch-off phase of the IGBT device;
a timer unit configured to measure a time delay between the obtained pulses indicating a start and end of the Miller plateau phase during the switch-off phase of the IGBT device; and
a junction temperature calculation unit configured to determine at least one of the junction temperature and the remaining lifetime of the IGBT device based on the measured time delay.
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Accused Products
Abstract
A system and method are provided for monitoring in real time the operating state of an IGBT device, to determine a junction temperature and/or the remaining lifetime of an IGBT device. The system includes a differential unit configured to receive a gate-emitter voltage characteristic of the IGBT device to be measured and to differentiate the gate-emitter voltage characteristic to obtain pulses correlating with edges formed by a Miller plateau phase during a switch-off phase of the IGBT device. The system also includes a timer unit configured to measure the time delay between the obtained pulses indicating the start and end of the Miller plateau phase during the switch-off phase of the IGBT device, and a junction temperature calculation unit configured to determine at least one of the junction temperature of the IGBT device and/or the remaining lifetime of the IGBT device based on the measured time delay.
16 Citations
18 Claims
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1. A system for determining at least one of a junction temperature and a remaining lifetime of an IGBT device, comprising:
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a differential unit configured to receive a gate-emitter voltage characteristic of the IGBT device to be measured, and to differentiate the gate-emitter voltage characteristic to obtain pulses correlating with edges formed by a Miller plateau phase during a switch-off phase of the IGBT device; a timer unit configured to measure a time delay between the obtained pulses indicating a start and end of the Miller plateau phase during the switch-off phase of the IGBT device; and a junction temperature calculation unit configured to determine at least one of the junction temperature and the remaining lifetime of the IGBT device based on the measured time delay. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method for determining at least one of a junction temperature and a remaining lifetime of an IGBT device, the method comprising:
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differentiating a gate-emitter voltage characteristic to obtain pulses correlating with edges formed by a Miller plateau phase during a switch-off phase of the IGBT device; measuring a time delay between the obtained pulses indicating the start and end of the Miller plateau phase during the switch-off phase of the IGBT device; and determining at least one of the junction temperature and the remaining lifetime of the IGBT device based on the measured time delay. - View Dependent Claims (14, 15, 16, 17, 18)
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Specification