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SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

  • US 20130181212A1
  • Filed: 07/06/2012
  • Published: 07/18/2013
  • Est. Priority Date: 01/17/2012
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a substrate;

    a semiconductor layer disposed on the substrate;

    a barrier layer disposed on the semiconductor layer; and

    an insulating layer disposed on the barrier layer,wherein the semiconductor layer includes an oxide semiconductor,wherein the barrier layer includes a material including at least one of a lower standard electrode potential than a semiconductor material of the oxide semiconductor, a lower electron affinity than the semiconductor material of the oxide semiconductor, or a larger band gap than the semiconductor material of the oxide semiconductor,wherein the insulating layer includes at least one of a silicon-based oxide or a silicon-based nitride, andwherein the insulating layer includes a portion which contacts with an upper surface of the barrier layer.

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