MAGNETORESISTIVE ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY

• US 20130181305A1
• Filed: 02/28/2013
• Published: 07/18/2013
• Est. Priority Date: 09/17/2010
• Status: Abandoned Application

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Nakayama, Masahiko, Yoda, Hiroaki, Kishi, Tatsuya, Ozeki, Jyunichi, Kai, Tadashi, Aikawa, Hisanori, Ikegawa, Sumio
• Application Number:
  US13/781,529
• Publication Number:
  US 20130181305A1
• Time in Patent Office: Days
• US Class Current: 257/421
• CPC Class Codes: G11C 11/16 using elements in which the storage effect is based on magnetic spin effect
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: G11C 11/1655 Bit-line or column circuits
• CPC Class Codes: G11C 11/1659 Cell access
• CPC Class Codes: G11C 11/1675 Writing or programming circuits or methods
• CPC Class Codes: G11C 11/1693 Timing circuits or methods
• CPC Class Codes: H01F 10/123 having a L10 crystallographic structure, e.g. [Co,Fe][Pt,Pd] thin films
• CPC Class Codes: H01F 10/325 the spacer being noble metal
• CPC Class Codes: H01F 10/3254 the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
• CPC Class Codes: H01F 10/3272 by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
• CPC Class Codes: H01F 10/3286 Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
• CPC Class Codes: H01F 10/329 Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
• CPC Class Codes: H10B 61/10 comprising components having two electrodes, e.g. diodes or MIM elements
• CPC Class Codes: H10B 61/22 of the field-effect transistor [FET] type
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/80 Constructional details

Abstract

A magnetoresistive element according to an embodiment includes: a first ferromagnetic layer having changeable magnetization substantially perpendicular to a film plane; a second ferromagnetic layer having fixed magnetization substantially perpendicular to the film plane; a first nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer; a third ferromagnetic layer provided on the opposite side of the second ferromagnetic layer from the first nonmagnetic layer, the third ferromagnetic layer having magnetization substantially parallel to the film plane, the third ferromagnetic layer generating a rotating magnetic field when spin-polarized electrons are injected thereinto; and a second nonmagnetic layer provided between the second ferromagnetic layer and the third ferromagnetic layer.

Claims

1. A magnetoresistive element comprising:

a first ferromagnetic layer having changeable magnetization substantially perpendicular to a film plane;

a second ferromagnetic layer having fixed magnetization substantially perpendicular to the film plane;

a first nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer;

a third ferromagnetic layer provided on the opposite side of the second ferromagnetic layer from the first nonmagnetic layer, the third ferromagnetic layer having magnetization substantially parallel to the film plane, the third ferromagnetic layer generating a rotating magnetic field when spin-polarized electrons are injected thereinto; and

a second nonmagnetic layer provided between the second ferromagnetic layer and the third ferromagnetic layer, wherein

the magnetization of the first ferromagnetic layer is reversed by the rotating magnetic field generated from the third ferromagnetic layer when a first current is flowed in one of a direction from the third ferromagnetic layer toward the first ferromagnetic layer via the second ferromagnetic layer and a direction from the first ferromagnetic layer toward the third ferromagnetic layer via the second ferromagnetic layer, and,

when a second current having a different current density from the first current is flowed in the one direction, the magnetization of the first ferromagnetic layer is reversed by electrons spin-polarized by the second ferromagnetic layer to a different direction from the magnetization caused when the first current is flowed.

2. The magnetoresistive element according to claim 1, wherein the third ferromagnetic layer has a stack structure including first and second ferromagnetic films each having a magnetization direction substantially parallel to the film plane, and a third nonmagnetic layer located between the first and second ferromagnetic films, the first and second ferromagnetic films being antiferromagnetically coupled to each other, the third nonmagnetic layer being interposed between the first and second ferromagnetic films.

3. The magnetoresistive element according to claim 1, wherein a fourth ferromagnetic layer having magnetization in the opposite direction from the magnetization direction of the second ferromagnetic layer is provided on the opposite side of the first ferromagnetic layer from the first nonmagnetic layer via a third nonmagnetic layer, or on the opposite side of the third ferromagnetic layer from the second nonmagnetic layer via the third nonmagnetic layer.

4. The magnetoresistive element according to claim 1, wherein the first nonmagnetic layer is an oxide containing one element selected from the group consisting of Mg, Al, Ti, and Hf.

5. The magnetoresistive element according to claim 1, wherein the second nonmagnetic layer is a metal containing one element selected from the group consisting of Cu, Au, Ru, and Ag.

6. The magnetoresistive element according to claim 1, wherein the first ferromagnetic layer is one of:

a magnetic material having a L1₀ crystal structure containing at least one element selected from the group consisting of Fe, Co, and Ni, and at least one element selected from the group consisting of Pt and Pd; and

a magnetic material having a hexagonal crystal structure containing at least one element selected from the group consisting of Fe, Co, and Ni, and at least one element selected from the group consisting of Cr, Ta, Pt, and Pd.

7. The magnetoresistive element according to claim 1, wherein the first ferromagnetic layer has a stack structure including:

a magnetic material having an L1₀ crystal structure containing at least one element selected from the group consisting of Fe, Co, and Ni, and at least one element selected from the group consisting of Pt and Pd; and

an alloy containing at least one element selected from the group consisting of Fe, Co, Ni, and Mn.

8. The magnetoresistive element according to claim 1, wherein the first ferromagnetic layer has a stack structure including:

a magnetic material having a hexagonal crystal structure containing at least one element selected from the group consisting of Fe, Co, and Ni, and at least one element selected from the group consisting of Cr, Ta, Pt, and Pd; and

an alloy containing at least one element selected from the group consisting of Fe, Co, Ni, and Mn.

9. The magnetoresistive element according to claim 1, wherein a frequency of the rotating magnetic field is within a predetermined range including a resonant frequency of the first ferromagnetic layer.

10. The magnetoresistive element according to claim 1, wherein the rotating magnetic field is a microwave magnetic field.

11. A magnetic random access memory comprising:

the magnetoresistive element according to claim 1;

a first line electrically connected to the first ferromagnetic layer of the magnetoresistive element via a first electrode; and

a second line electrically connected to the third ferromagnetic layer of the magnetoresistive element via a second electrode.

12. The magnetic random access memory according to claim 11, further comprising

a select transistor provided between the first electrode and the first line or between the second electrode and the second line.

13. The magnetic random access memory according to claim 11, further comprising

a rectifier provided between the first electrode and the first line or between the second electrode and the second line.

14. The magnetic random access memory according to claim 11, wherein the third ferromagnetic layer has a stack structure including first and second ferromagnetic films each having a magnetization direction substantially parallel to the film plane, and a third nonmagnetic layer located between the first and second ferromagnetic films, the first and second ferromagnetic films being antiferromagnetically coupled to each other, the third nonmagnetic layer being interposed between the first and second ferromagnetic films.

15. The magnetic random access memory according to claim 11, wherein a fourth ferromagnetic layer having magnetization in the opposite direction from the magnetization direction of the second ferromagnetic layer is provided on the opposite side of the first ferromagnetic layer from the first nonmagnetic layer via a third nonmagnetic layer, or on the opposite side of the third ferromagnetic layer from the second nonmagnetic layer via the third nonmagnetic layer.

16. The magnetic random access memory according to claim 11, wherein the first nonmagnetic layer is an oxide containing one element selected from the group consisting of Mg, Al, Ti, and Hf.

17. The magnetic random access memory according to claim 11, wherein the second nonmagnetic layer is a metal containing one element selected from the group consisting of Cu, Au, Ru, and Ag.

18. The magnetic random access memory according to claim 11, wherein the first ferromagnetic layer is one of:

a magnetic material having a L1₀ crystal structure containing at least one element selected from the group consisting of Fe, Co, and Ni, and at least one element selected from the group consisting of Pt and Pd; and

a magnetic material having a hexagonal crystal structure containing at least one element selected from the group consisting of Fe, Co, and Ni, and at least one element selected from the group consisting of Cr, Ta, Pt, and Pd.

19. The magnetic random access memory according to claim 11, wherein the first ferromagnetic layer has a stack structure including:

a magnetic material having an L1₀ crystal structure containing at least one element selected from the group consisting of Fe, Co, and Ni, and at least one element selected from the group consisting of Pt and Pd; and

an alloy containing at least one element selected from the group consisting of Fe, Co, Ni, and Mn.

20. The magnetic random access memory according to claim 11, wherein the first ferromagnetic layer has a stack structure including:

a magnetic material having a hexagonal crystal structure containing at least one element selected from the group consisting of Fe, Co, and Ni, and at least one element selected from the group consisting of Cr, Ta, Pt, and Pd; and

an alloy containing at least one element selected from the group consisting of Fe, Co, Ni, and Mn.