SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device comprising:
- a first semiconductor layer of a first conductivity type;
a second semiconductor layer of a first conductivity type provided on the first semiconductor layer;
a third semiconductor layer of a second conductivity type provided on the second semiconductor layer to be joined to the second semiconductor layer;
an isolation layer surrounding a periphery of the third semiconductor layer and being deeper than the third semiconductor layer; and
a guard ring layer of the second conductivity type provided between the third semiconductor layer and the isolation layer, being adjacent to the third semiconductor layer, and being deeper than the third semiconductor layer.
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Accused Products
Abstract
According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a first conductivity type, a third semiconductor layer of a second conductivity type, an isolation layer, and a guard ring layer of the second conductivity type. The second semiconductor layer is provided on the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer to be joined to the second semiconductor layer. The isolation layer surrounds a periphery of the third semiconductor layer and is deeper than the third semiconductor layer. The guard ring layer is provided between the third semiconductor layer and the isolation layer, adjacent to the third semiconductor layer, and deeper than the third semiconductor layer.
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Citations
19 Claims
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1. A semiconductor device comprising:
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a first semiconductor layer of a first conductivity type; a second semiconductor layer of a first conductivity type provided on the first semiconductor layer; a third semiconductor layer of a second conductivity type provided on the second semiconductor layer to be joined to the second semiconductor layer; an isolation layer surrounding a periphery of the third semiconductor layer and being deeper than the third semiconductor layer; and a guard ring layer of the second conductivity type provided between the third semiconductor layer and the isolation layer, being adjacent to the third semiconductor layer, and being deeper than the third semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A semiconductor device comprising:
- a substrate;
a diode provided on the substrate;
a first transistor provided on the substrate; and
a second transistor provided on the substrate,the diode including; a first semiconductor layer of a first conductivity type provided on the substrate; a second semiconductor layer of the first conductivity type provided on the first semiconductor layer; a third semiconductor layer of a second conductivity type provided on the second semiconductor layer to be joined to the second semiconductor layer; an isolation layer surrounding a periphery of the third semiconductor layer and being deeper than the third semiconductor layer; and a guard ring layer of the second conductivity type provided between the third semiconductor layer and the isolation layer, being adjacent to the third semiconductor layer, and being deeper than the third semiconductor layer, the first transistor including; a first conductivity type source layer; a first conductivity type drain layer; a second conductivity type channel region provided between the first conductivity type source layer and the first conductivity type drain layer; a first gate insulating film provided on the second conductivity type channel region; and a first gate electrode provided on the first gate insulating film, the second transistor including; a second conductivity type source layer; a second conductivity type drain layer; a first conductivity type channel region provided between the second conductivity type source layer and the second conductivity type drain layer; a second gate insulating film provided on the first conductivity type channel region; and a second gate electrode provided on the second gate insulating film. - View Dependent Claims (18, 19)
- a substrate;
Specification