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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

  • US 20130193433A1
  • Filed: 01/24/2013
  • Published: 08/01/2013
  • Est. Priority Date: 01/26/2012
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising a transistor and a capacitor,the transistor comprising:

  • an oxide semiconductor film over an insulating surface;

    a gate insulating film over the oxide semiconductor film;

    a gate electrode over the gate insulating film;

    a first electrode film covering an end portion of the oxide semiconductor film, and in direct contact with the end portion of the oxide semiconductor film; and

    a second electrode film over the first electrode film, and electrically connected to the first electrode film and the oxide semiconductor film,the capacitor comprising;

    a lower electrode film;

    an insulating film over the lower electrode film; and

    an upper electrode film over the insulating film,wherein the first electrode film and the lower electrode film are over and in direct contact with a same surface.

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