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NOVEL SEMICONDUCTOR DEVICE AND STRUCTURE

  • US 20130193488A1
  • Filed: 11/21/2012
  • Published: 08/01/2013
  • Est. Priority Date: 04/14/2009
  • Status: Abandoned Application
First Claim
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1. A semiconductor device comprising:

  • a first single crystal layer comprising first transistors, first alignment mark, and at least one metal layer, said at least one metal layer overlying said first single crystal layer,wherein said at least one metal layer comprises copper or aluminum; and

    a second layer overlying said at least one metal layer;

    wherein said second layer comprises second transistors,wherein said second transistors comprise mono-crystal,wherein said second transistors comprise P type transistors and N type transistors, andwherein said second transistors are aligned to said first alignment mark with less than 40 nm alignment error.

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