NOVEL SEMICONDUCTOR DEVICE AND STRUCTURE
First Claim
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1. A semiconductor device comprising:
- a first single crystal layer comprising first transistors, first alignment mark, and at least one metal layer, said at least one metal layer overlying said first single crystal layer,wherein said at least one metal layer comprises copper or aluminum; and
a second layer overlying said at least one metal layer;
wherein said second layer comprises second transistors,wherein said second transistors comprise mono-crystal,wherein said second transistors comprise P type transistors and N type transistors, andwherein said second transistors are aligned to said first alignment mark with less than 40 nm alignment error.
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Abstract
A semiconductor device including: a first single crystal layer including first transistors, first alignment mark, and at least one metal layer, said at least one metal layer overlying said first single crystal layer, wherein the at least one metal layer includes copper or aluminum; and a second layer overlying the at least one metal layer; wherein the second layer includes second transistors, the second transistors include mono-crystal, the second transistors include P type transistors and N type transistors, and the second transistors are aligned to the first alignment mark with less than 40 nm alignment error.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a first single crystal layer comprising first transistors, first alignment mark, and at least one metal layer, said at least one metal layer overlying said first single crystal layer, wherein said at least one metal layer comprises copper or aluminum; and a second layer overlying said at least one metal layer; wherein said second layer comprises second transistors, wherein said second transistors comprise mono-crystal, wherein said second transistors comprise P type transistors and N type transistors, and wherein said second transistors are aligned to said first alignment mark with less than 40 nm alignment error. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device comprising:
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a first single crystal layer comprising first transistors, first alignment mark, and at least one metal layer, said at least one metal layer overlying said first single crystal layer, wherein said at least one metal layer comprises copper or aluminum; and a second layer overlying said at least one metal layer; wherein said second layer comprises second transistors, said second transistors comprising mono-crystal, wherein said second layer comprises a plurality of second layer logic circuits comprising said second transistors, and wherein said second transistors are aligned to said first alignment mark with less than 40 nm alignment error. - View Dependent Claims (8, 9, 10, 11, 12, 13)
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14. A semiconductor device comprising:
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a first single crystal layer comprising first transistors, first alignment mark, and at least one metal layer, said at least one metal layer overlying said first single crystal layer, wherein said at least one metal layer comprises copper or aluminum; and a second layer overlying said at least one metal layer; wherein said second layer comprises second transistors, said second transistors comprise mono-crystal, wherein said second layer comprises a plurality of Flip-Flops, wherein said plurality of Flip-Flops comprises said second transistors, and wherein said second transistors are aligned to said first alignment mark with less than 40 nm alignment error. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification