SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF

• US 20130193493A1
• Filed: 01/15/2013
• Published: 08/01/2013
• Est. Priority Date: 01/26/2012
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Granted Patent: US 9,006,733 B2
• Time in Patent Office: Days
• US Class Current: 257/288
• CPC Class Codes: H01L 21/426 using masks
• CPC Class Codes: H01L 27/1207 combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/66477 with an insulated gate, i.e. MISFET
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78 with field effect produced by an insulated gate H01L29/7725, H01L29/775, H01L29/778 take precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10B 10/00 Static random access memory [SRAM] devices
• CPC Class Codes: H10B 12/00 Dynamic random access memory [DRAM] devices

Abstract

In a semiconductor device including a transistor using an oxide semiconductor film, stable electric characteristics can be provided and high reliability can be achieved. A structure of the semiconductor device, which achieves high-speed response and high-speed operation, is provided. In a semiconductor device including a transistor in which an oxide semiconductor film, a gate insulating film, and a gate electrode layer are stacked in order and a sidewall insulating layer is provided on the side surface of the gate electrode layer, the sidewall insulating layer has an oxygen-excess regions, which is formed in such a manner that a first insulating film is formed and then is subjected to oxygen doping treatment, a second insulating is formed over the first insulating film, and a stacked layer of the first insulating film and the second insulating film are etched.

Claims

1. A semiconductor device comprising:

an oxide semiconductor film provided over an oxide insulating film and including a channel formation region;

a gate insulating film over the oxide semiconductor film;

a gate electrode layer over the gate insulating film;

a sidewall insulating layer covering a part of a top surface of the gate insulating film and a side surface of the gate electrode layer; and

a source electrode layer and a drain electrode layer which are electrically connected to the oxide semiconductor film,

wherein the sidewall insulating layer has an oxygen-excess region.

2. The semiconductor device according to claim 1, wherein the sidewall insulating layer include a first insulating film in contact with the oxide semiconductor film and a second insulating film thicker than the first insulating film on the first insulating film.

3. The semiconductor device according to claim 2, wherein the sidewall insulating layer has the oxygen-excess region by performing oxygen doping treatment on the first insulating film and providing the second insulating film in contact with the first insulating film after the oxygen doping treatment.

4. The semiconductor device according to claim 1, wherein a region of the oxide semiconductor film, which does not overlap with the gate electrode layer, includes an impurity element.

5. The semiconductor device according to claim 2, wherein the first insulating film has a thickness of greater than or equal to 20 nm and less than or equal to 50 nm.

6. The semiconductor device according to claim 2, wherein the second insulating film has a thickness of greater than or equal to 200 nm and less than or equal to 500 nm.

7. The semiconductor device according to claim 1, wherein an aluminum oxide film is provided as a barrier film over the oxide semiconductor film, the gate insulating film, and the sidewall insulating layer.

8. The semiconductor device according to claim 1, wherein the source electrode layer and the drain electrode layer are in contact with the oxide semiconductor film and the sidewall insulating layer.

9. A method for manufacturing a semiconductor device, comprising the steps of:

forming an oxide insulating film;

forming an oxide semiconductor film over the oxide insulating film;

forming a gate insulating film over the oxide semiconductor film;

forming a gate electrode layer overlapping with the oxide semiconductor film, over the gate insulating film;

forming a sidewall insulating layer covering a side surface of the gate electrode layer; and

forming a source electrode layer and a drain electrode layer which are electrically connected to the oxide semiconductor film,

wherein the sidewall insulating layer has oxygen-excess region.

10. The method for manufacturing a semiconductor device according to claim 9, wherein after formation of the gate electrode layer, an impurity element is introduced into the oxide semiconductor film using the gate electrode layer as a mask.

11. The method for manufacturing a semiconductor device according to claim 9, wherein a barrier film is formed over the oxide semiconductor film, the gate insulating film, the gate electrode layer, and the sidewall insulating layer.

12. The method for manufacturing a semiconductor device according to claim 11, wherein an aluminum oxide film which is formed in such a manner that an aluminum film is formed as the barrier film and then is subjected to oxygen doping treatment to form the aluminum oxide film, is used.

13. The method for manufacturing a semiconductor device according to claim 12, wherein after formation of the aluminum oxide film, heat treatment is performed.

14. The method for manufacturing a semiconductor device according to claim 9, wherein the sidewall insulating layer is formed by chemical vapor deposition.

15. A method for manufacturing a semiconductor device comprising the steps of:

forming an oxide insulating film;

forming an oxide semiconductor film over the oxide insulating film;

forming a gate insulating film over the oxide semiconductor film;

forming a gate electrode layer overlapping with the oxide semiconductor film, over the gate insulating film;

forming a first insulating film over the gate insulating film and the gate electrode layer;

performing oxygen doping treatment on the first insulating film;

forming a second insulating film over the first insulating film after the oxygen doping treatment;

etching the first insulating film after the oxygen doping treatment and the second insulating film, thereby forming a sidewall insulating layer covering a side surface of the gate electrode layer; and

forming a source electrode layer and a drain electrode layer which are electrically connected to the oxide semiconductor film.

16. The method for manufacturing a semiconductor device according to claim 15, wherein after formation of the gate electrode layer, an impurity element is introduced into the oxide semiconductor film using the gate electrode layer as a mask.

17. The method for manufacturing a semiconductor device according to claim 15, wherein a barrier film is formed over the oxide semiconductor film, the gate insulating film, the gate electrode layer, and the sidewall insulating layer.

18. The method for manufacturing a semiconductor device according to claim 17, wherein an aluminum oxide film which is formed in such a manner that an aluminum film is formed as the barrier film and then is subjected to oxygen doping treatment is used.

19. The method for manufacturing a semiconductor device according to claim 18, wherein after formation of the aluminum oxide film, heat treatment is performed.

20. The method for manufacturing a semiconductor device according to claim 15, wherein the first insulating film and the second insulating film are formed by chemical vapor deposition.