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METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

  • US 20130196468A1
  • Filed: 01/22/2013
  • Published: 08/01/2013
  • Est. Priority Date: 01/26/2012
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device comprising the steps of:

  • forming an oxide semiconductor film over an oxide insulating film;

    forming a metal film covering the oxide semiconductor film;

    forming a metal oxide film by adding oxygen to the metal film; and

    forming a gate electrode over the metal oxide film.

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