METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
First Claim
1. A method for manufacturing a semiconductor device comprising the steps of:
- forming an oxide semiconductor film over an oxide insulating film;
forming a metal film covering the oxide semiconductor film;
forming a metal oxide film by adding oxygen to the metal film; and
forming a gate electrode over the metal oxide film.
1 Assignment
0 Petitions
Accused Products
Abstract
To improve productivity of a transistor that includes an oxide semiconductor and has good electrical characteristics. In a top-gate transistor including a gate insulating film and a gate electrode over an oxide semiconductor film, a metal film is formed over the oxide semiconductor film, oxygen is added to the metal film to form a metal oxide film, and the metal oxide film is used as a gate insulating film. After an oxide insulating film is formed over the oxide semiconductor film, a metal film may be formed over the oxide insulating film. Oxygen is added to the metal film to form a metal oxide film and added also to the oxide semiconductor film or the oxide insulating film.
-
Citations
16 Claims
-
1. A method for manufacturing a semiconductor device comprising the steps of:
-
forming an oxide semiconductor film over an oxide insulating film; forming a metal film covering the oxide semiconductor film; forming a metal oxide film by adding oxygen to the metal film; and forming a gate electrode over the metal oxide film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
-
-
10. A method for manufacturing a semiconductor device comprising the steps of:
-
forming an oxide semiconductor film over a first oxide insulating film; forming a second oxide insulating film over the oxide semiconductor film; forming a gate electrode over the second oxide insulating film; forming sidewall insulating films in contact with side surfaces of the gate electrode; etching part of the second oxide insulating film that does not overlap with the gate electrode and the sidewall insulating films; forming a pair of electrodes in contact with parts of the oxide semiconductor film and the sidewall insulating films which are exposed by the etching; forming a metal film covering the pair of electrodes and the gate electrode; and forming a metal oxide film by adding oxygen to the metal film. - View Dependent Claims (11, 12, 13, 14, 15, 16)
-
Specification