SELECTIVE FORMATION OF METALLIC FILMS ON METALLIC SURFACES
First Claim
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1. A method for selectively depositing a film on a substrate comprising a first metal surface and a second dielectric surface, the method comprising:
- cleaning the substrate;
after cleaning carrying out one or more deposition cycles, each cycle comprising;
contacting the substrate with a first precursor comprising silicon or boron to selectively form a layer of first material comprising Si or B on the first metal surface relative to the second dielectric surface; and
converting the first material on the first metal surface to a second metallic material by exposing the first material to a second precursor comprising metal,wherein the selectivity for deposition on the first surface relative to the second surface is greater than about 50%.
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Abstract
Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In some embodiments, a first precursor forms a layer on the first surface and is subsequently reacted or converted to form a metallic layer. The deposition temperature may be selected such that a selectivity of above about 50% or even about 90% is achieved.
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Citations
30 Claims
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1. A method for selectively depositing a film on a substrate comprising a first metal surface and a second dielectric surface, the method comprising:
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cleaning the substrate; after cleaning carrying out one or more deposition cycles, each cycle comprising; contacting the substrate with a first precursor comprising silicon or boron to selectively form a layer of first material comprising Si or B on the first metal surface relative to the second dielectric surface; and converting the first material on the first metal surface to a second metallic material by exposing the first material to a second precursor comprising metal, wherein the selectivity for deposition on the first surface relative to the second surface is greater than about 50%. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method for selectively depositing a film on a first copper surface on a substrate relative to a second dielectric surface on the substrate, the method comprising:
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contacting the substrate with a plasma; and after contacting the substrate with the plasma, conducting one or more deposition cycles, each deposition cycle comprising; contacting the substrate with a first precursor comprising silicon or boron; and contacting the substrate with a second precursor comprising a metal fluoride;
wherein the temperature of the substrate during the one or more deposition cycles is selected such that a film forms on the first surface with a selectivity of greater than about 90% relative to the second surface. - View Dependent Claims (19, 20, 21)
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22. A method for selectively depositing a film on a first metal surface of a substrate relative to a second dielectric surface, the method comprising:
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cleaning the substrate surface with plasma comprising noble gas to remove a passivation layer from the first metal surface; after cleaning, selectively depositing a film on the first metal surface relative to the second dielectric surface, wherein the selectivity for deposition on the first metal surface relative to the second dielectric surface is greater than about 50% and wherein the second dielectric surface has not been treated to block deposition prior to selectively depositing the film. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30)
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Specification