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NANO MOSFET WITH TRENCH BOTTOM OXIDE SHIELDED AND THIRD DIMENSIONAL P-BODY CONTACT

  • US 20130200451A1
  • Filed: 02/02/2012
  • Published: 08/08/2013
  • Est. Priority Date: 02/02/2012
  • Status: Active Grant
First Claim
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1. A semiconductor power device, comprising:

  • a lightly doped layer of a first conductivity type formed on top of a heavily doped layer of the first conductivity type,one or more devices formed in the lightly doped layer, each device including a doped body region of a second conductivity type that is opposite the first conductivity type,one or more electrically insulated gate electrodes formed in one or more corresponding trenches in the lightly doped layer, and a source region, wherein each of the one or more trenches has a depth that extends in a first dimension, a width that extends in a second dimension and a length that extends in a third dimension, wherein the first dimension is perpendicular to a plane of the heavily doped layer and wherein the second and third dimensions are parallel to the plane of the heavily doped layer;

    wherein the doped body region is formed adjacent to one or more of the trenches proximate an upper surface of the lightly doped layer;

    wherein the source region is formed proximate the upper surface and adjacent to one or more of the trenches extending along the third dimension; and

    one or more deep heavily doped contacts of the second conductivity type formed at one or more locations proximate one or more of the trenches along the third dimension, wherein the one or more deep heavily doped contacts extend in the first direction from a surface below a top surface of the gate electrodes into a portion of the lightly doped layer substantially a same depth as a bottom of the doped body region, wherein the one or more deep heavily doped contacts are in electrical contact with the source region.

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