SEALANT LAMINATED COMPOSITE, SEALED SEMICONDUCTOR DEVICES MOUNTING SUBSTRATE, SEALED SEMICONDUCTOR DEVICES FORMING WAFER, SEMICONDUCTOR APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR APPARATUS

• US 20130200534A1
• Filed: 01/24/2013
• Published: 08/08/2013
• Est. Priority Date: 02/07/2012
• Status: Active Grant

• Current Assignee: Shin-Etsu Chemical Company Limited
• Original Assignee: Shin-Etsu Chemical Company Limited
• Inventors: SHIOBARA, Toshio, AKIBA, Hideki, SEKIGUCHI, Susumu
• Granted Patent: US 8,872,358 B2
• Time in Patent Office: Days
• US Class Current: 257/787
• CPC Class Codes: B32B 27/00 Layered products comprising a layer of synthetic resin fibrous or filamentary layer made of a synthetic resin B32B5/02; particulate layer made of a synthetic resin B32B5/16; foamed layer made of a synthetic resin B32B5/18
• CPC Class Codes: B32B 5/00 Layered products characterised by the non- homogeneity or physical structure , i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
• CPC Class Codes: H01L 21/561 Batch processing
• CPC Class Codes: H01L 21/78 with subsequent division of the substrate into plural individual devices cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L21/304
• CPC Class Codes: H01L 2224/29099 Material
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 23/293 Organic, e.g. plastic
• CPC Class Codes: H01L 23/31 characterised by the arrangement or shape
• CPC Class Codes: H01L 23/3135 Double encapsulation or coating and encapsulation
• CPC Class Codes: H01L 24/32 of an individual layer connector
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/10253 Silicon [Si]
• CPC Class Codes: H01L 2924/15788 Glasses, e.g. amorphous oxides, nitrides or fluorides
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: Y10T 428/24942 including components having same physical characteristic in differing degree
• CPC Class Codes: Y10T 428/26 Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
• CPC Class Codes: Y10T 428/269 including synthetic resin or polymer layer or component
• CPC Class Codes: Y10T 428/31504 Composite [nonstructural laminate]
• CPC Class Codes: Y10T 428/31511 : Of epoxy ether
• CPC Class Codes: Y10T 428/31663 : As siloxane, silicone or silane

Abstract

Described herein is a sealant laminated composite for collectively sealing a semiconductor device'"'"'s mounting surface of a substrate on which semiconductor devices are mounted or a semiconductor device'"'"'s forming surface of a wafer on which semiconductor devices are formed. The composite can include a support wafer and an uncured resin layer constituted of an uncured thermosetting resin formed on one side of the support wafer. In certain aspects, the sealant laminated composite is very versatile, even when a large diameter or thin substrate or wafer is sealed. In certain aspects, this can prevent the substrate or wafer from warping and the semiconductor devices from peeling; can collectively seal a semiconductor device'"'"'s mounting surface of a substrate on which semiconductor devices are mounted or a semiconductor device'"'"'s forming surface of a wafer on which semiconductor devices are formed on a wafer level; and can provide a sealant laminated composite that is excellent in the heat resistance and humidity resistance after sealing.

Claims

1. A sealant laminated composite for collectively sealing a semiconductor devices mounting surface of a substrate on which semiconductor devices are mounted or a semiconductor devices forming surface of a wafer on which semiconductor devices are formed, comprising:

a support wafer; and

an uncured resin layer constituted of an uncured thermosetting resin formed on one side of the support wafer.

2. The sealant laminated composite according to claim 1, wherein difference between an expansion coefficient of the support wafer and that of the substrate on which the semiconductor devices are mounted or the wafer on which the semiconductor devices are formed is 3 ppm or less.

3. The sealant laminated composite according to claim 1, wherein a thickness of the uncured resin layer is 20 μ

m or more and 2000 μ

m or less.

4. The sealant laminated composite according to claim 2, wherein a thickness of the uncured resin layer is 20 μ

m or more and 2000 μ

m or less.

5. The sealant laminated composite according to claim 1, wherein the uncured resin layer contains any one of an epoxy resin, a silicone resin, and an epoxy/silicone mixed resin that solidify at less than 50°

C. and melt at 50°

C. or more and 150°

C. or less.

6. The sealant laminated composite according to claims 2, wherein the uncured resin layer contains any one of an epoxy resin, a silicone resin, and an epoxy/silicone mixed resin that solidify at less than 50°

C. and melt at 50°

C. or more and 150°

C. or less.

7. The sealant laminated composite according to claim 3, wherein the uncured resin layer contains any one of an epoxy resin, a silicone resin, and an epoxy/silicone mixed resin that solidify at less than 50°

C. and melt at 50°

C. or more and 150°

C. or less.

8. The sealant laminated composite according to claim 4, wherein the uncured resin layer contains any one of an epoxy resin, a silicone resin, and an epoxy/silicone mixed resin that solidify at less than 50°

C. and melt at 50°

C. or more and 150°

C. or less.

9. The sealant laminated composite according to claim 1, wherein the support wafer is a resin-impregnated fiber base material constituted of a fiber base material impregnated with a thermosetting resin composition that is semi-cured or cured, the uncured resin layer is constituted of an uncured thermosetting resin composition formed on one side of the resin-impregnated fiber base material with a thickness more than 200 μ

m and 2000 μ

m or less, and at least one of the thermosetting resin composition that is impregnated in the fiber base material and the thermosetting resin composition that constitutes the uncured resin layer contains an ion trapping agent.

10. The sealant laminated composite according to claim 2, wherein the support wafer is a resin-impregnated fiber base material constituted of a fiber base material impregnated with a thermosetting resin composition that is semi-cured or cured, the uncured resin layer is constituted of an uncured thermosetting resin composition formed on one side of the resin-impregnated fiber base material with a thickness more than 200 μ

m and 2000 μ

m or less, and at least one of the thermosetting resin composition that is impregnated in the fiber base material and the thermosetting resin composition that constitutes the uncured resin layer contains an ion trapping agent.

11. The sealant laminated composite according to claim 3, wherein the support wafer is a resin-impregnated fiber base material constituted of a fiber base material impregnated with a thermosetting resin composition that is semi-cured or cured, the uncured resin layer is constituted of an uncured thermosetting resin composition formed on one side of the resin-impregnated fiber base material with a thickness more than 200 μ

m and 2000 μ

m or less, and at least one of the thermosetting resin composition that is impregnated in the fiber base material and the thermosetting resin composition that constitutes the uncured resin layer contains an ion trapping agent.

12. The sealant laminated composite according to claim 4, wherein the support wafer is a resin-impregnated fiber base material constituted of a fiber base material impregnated with a thermosetting resin composition that is semi-cured or cured, the uncured resin layer is constituted of an uncured thermosetting resin composition formed on one side of the resin-impregnated fiber base material with a thickness more than 200 μ

m and 2000 μ

m or less, and at least one of the thermosetting resin composition that is impregnated in the fiber base material and the thermosetting resin composition that constitutes the uncured resin layer contains an ion trapping agent.

13. The sealant laminated composite according to claim 5, wherein the support wafer is a resin-impregnated fiber base material constituted of a fiber base material impregnated with a thermosetting resin composition that is semi-cured or cured, the uncured resin layer is constituted of an uncured thermosetting resin composition formed on one side of the resin-impregnated fiber base material with a thickness more than 200 μ

m and 2000 μ

m or less, and at least one of the thermosetting resin composition that is impregnated in the fiber base material and the thermosetting resin composition that constitutes the uncured resin layer contains an ion trapping agent.

14. The sealant laminated composite according to claim 6, wherein the support wafer is a resin-impregnated fiber base material constituted of a fiber base material impregnated with a thermosetting resin composition that is semi-cured or cured, the uncured resin layer is constituted of an uncured thermosetting resin composition formed on one side of the resin-impregnated fiber base material with a thickness more than 200 μ

m and 2000 μ

m or less, and at least one of the thermosetting resin composition that is impregnated in the fiber base material and the thermosetting resin composition that constitutes the uncured resin layer contains an ion trapping agent.

15. The sealant laminated composite according to claim 7, wherein the support wafer is a resin-impregnated fiber base material constituted of a fiber base material impregnated with a thermosetting resin composition that is semi-cured or cured, the uncured resin layer is constituted of an uncured thermosetting resin composition formed on one side of the resin-impregnated fiber base material with a thickness more than 200 μ

m and 2000 μ

m or less, and at least one of the thermosetting resin composition that is impregnated in the fiber base material and the thermosetting resin composition that constitutes the uncured resin layer contains an ion trapping agent.

16. The sealant laminated composite according to claim 8, wherein the support wafer is a resin-impregnated fiber base material constituted of a fiber base material impregnated with a thermosetting resin composition that is semi-cured or cured, the uncured resin layer is constituted of an uncured thermosetting resin composition formed on one side of the resin-impregnated fiber base material with a thickness more than 200 μ

m and 2000 μ

m or less, and at least one of the thermosetting resin composition that is impregnated in the fiber base material and the thermosetting resin composition that constitutes the uncured resin layer contains an ion trapping agent.

17. The sealant laminated composite according to claim 9, wherein both the thermosetting resin composition that is impregnated in the fiber base material and the thermosetting resin composition that constitutes the uncured resin layer contain the ion trapping agent.

18. The sealant laminated composite according to claim 16, wherein both the thermosetting resin composition that is impregnated in the fiber base material and the thermosetting resin composition that constitutes the uncured resin layer contain the ion trapping agent.

19. A sealed semiconductor devices mounting substrate, wherein a semiconductor devices mounting surface of a substrate on which semiconductor devices are mounted is covered with the uncured resin layer of the sealant laminated composite according to claim 1, and the uncured resin layer is heated and cured to collectively seal the semiconductor devices mounting surface with the sealant laminated composite.

20. A sealed semiconductor devices mounting substrate, wherein a semiconductor devices mounting surface of a substrate on which semiconductor devices are mounted is covered with the uncured resin layer of the sealant laminated composite according to claim 18, and the uncured resin layer is heated and cured to collectively seal the semiconductor devices mounting surface with the sealant laminated composite.

21. A sealed semiconductor devices forming wafer, wherein a semiconductor devices forming surface of a wafer on which semiconductor devices are formed is covered with the uncured resin layer of the sealant laminated composite according to claim 1, and the uncured resin layer is heated and cured to collectively seal the semiconductor devices forming surface with the sealant laminated composite.

22. A sealed semiconductor devices forming wafer, wherein a semiconductor devices forming surface of a wafer on which semiconductor devices are formed is covered with the uncured resin layer of the sealant laminated composite according to claim 18, and the uncured resin layer is heated and cured to collectively seal the semiconductor devices forming surface with the sealant laminated composite.

23. A semiconductor apparatus obtained by dicing the sealed semiconductor devices mounting substrate according to claim 19 or the sealed semiconductor devices forming wafer according to claim 21 into each piece.

24. A semiconductor apparatus obtained by dicing the sealed semiconductor devices mounting substrate according to claim 20 or the sealed semiconductor devices forming wafer according to claim 22 into each piece.

25. A method for manufacturing a semiconductor apparatus, comprising the steps of:

covering a semiconductor devices mounting surface of a substrate on which semiconductor devices are mounted, or a semiconductor devices forming surface of a wafer on which semiconductor devices are formed with the uncured resin layer of the sealant laminated composite according to claim 1;

collectively sealing the semiconductor devices mounting surface or the semiconductor devices forming surface by heating and curing the uncured resin layer to form a sealed semiconductor devices mounting substrate or a sealed semiconductor devices forming wafer; and

dicing the sealed semiconductor devices mounting substrate or the sealed semiconductor devices forming wafer into each piece to manufacture the semiconductor apparatus.

26. A method for manufacturing a semiconductor apparatus, comprising the steps of:

covering a semiconductor devices mounting surface of a substrate on which semiconductor devices are mounted, or a semiconductor devices forming surface of a wafer on which semiconductor devices are formed with the uncured resin layer of the sealant laminated composite according to claim 18;

collectively sealing the semiconductor devices mounting surface or the semiconductor devices forming surface by heating and curing the uncured resin layer to form a sealed semiconductor devices mounting substrate or a sealed semiconductor devices forming wafer; and

dicing the sealed semiconductor devices mounting substrate or the sealed semiconductor devices forming wafer into each piece to manufacture the semiconductor apparatus.