OPTICAL SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING OPTICAL SEMICONDUCTOR DEVICE

• US 20130202248A1
• Filed: 12/06/2012
• Published: 08/08/2013
• Est. Priority Date: 02/08/2012
• Status: Active Grant

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: UETAKE, Ayahito, Takabayashi, Kazumasa
• Granted Patent: US 8,938,138 B2
• Time in Patent Office: Days
• US Class Current: 385/14
• CPC Class Codes: G02B 6/12 of the integrated circuit kind electric integrated circuits H01L27/00
• CPC Class Codes: G02B 6/12004 Combinations of two or more optical elements
• CPC Class Codes: G02B 6/1228 Tapered waveguides, e.g. integrated spot-size transformers for coupling with fibres G02B6/305
• CPC Class Codes: H01S 5/0268 Integrated waveguide grating router, e.g. emission of a multi-wavelength laser array is combined by a "dragon router"
• CPC Class Codes: H01S 5/1014 Tapered waveguide, e.g. spotsize converter H01S5/1064 takes precedence

Abstract

An optical semiconductor device includes: a waveguide unit which is formed on a semiconductor substrate including a (100) plane and includes a core layer which propagates light; a spot size converting unit which is formed on the semiconductor substrate, is optically connected to the waveguide unit, and converts diameter of light propagated; and a pair of terraces which are formed on the semiconductor substrate and are opposed to each other while sandwiching the spot size converting unit. Interval between opposed units which are opposed to each other while sandwiching the spot size converting unit in the pair of terraces changes, and each of the opposed units includes a part whose orientation tilts to a [0-11] direction with respect to a [011] direction, and position of an upper end of the spot size converting unit is higher than that of an upper end of the waveguide unit.

Claims

1. An optical semiconductor device comprising:

a waveguide unit which is formed on a semiconductor substrate having a (100) plane and includes a core layer which propagates light;

a spot size converting unit which is formed on the semiconductor substrate, is optically connected to the waveguide unit, and converts diameter of light propagated; and

a pair of terraces which are formed on the semiconductor substrate and opposed to each other while sandwiching the spot size converting unit,

wherein interval between opposed units which are opposed to each other while sandwiching the spot size converting unit in the pair of terraces changes, and each of the opposed units includes a part whose orientation tilts to a [0-11] direction with respect to a [011] direction, and

position of an upper end of the spot size converting unit is higher than position of an upper end of the waveguide unit.

2. The optical semiconductor device according to claim 1, wherein the interval of the pair of terraces repeats enlargement and reduction.

3. The optical semiconductor device according to claim 1, wherein a part higher than the upper end of the waveguide unit in the spot size converting unit has a shape corresponding to the part whose orientation tilts to the [0-11] direction with respect to the [011] direction in the opposed unit.

4. The optical semiconductor device according to claim 1, wherein the opposed unit in the pair of terraces includes a part tilted at 30 degrees to 85 degrees toward the [0-11] direction from the [011] direction.

5. The optical semiconductor device according to claim 4, wherein the opposed unit in the pair of terraces includes a part tilted at 40 degrees to 50 degrees toward the [0-11] direction from the [011] direction.

6. The optical semiconductor device according to claim 4, wherein the opposed unit in the pair of terraces includes a part tilted at 45 degrees toward the [0-11] direction from the [011] direction.

7. The optical semiconductor device according to claim 1, wherein the spot size converting unit includes a second core layer which is extended from the core layer.

8. The optical semiconductor device according to claim 7, wherein an end width of the second core layer on the waveguide unit side is wider than an end width on the opposite side to the waveguide unit.

9. The optical semiconductor device according to claim 7, wherein the second core layer extends, in the spot size converting unit, from the waveguide unit side to an end in the direction opposite to the waveguide unit side of the spot size converting unit.

10. The optical semiconductor device according to claim 1, wherein shortest distance between the opposed units in the pair of terraces is 20 μ

m or less.

11. The optical semiconductor device according to claim 1, wherein extension orientation of the core layer includes a [011] direction component and a [0-11] direction component.

12. A method of manufacturing an optical semiconductor device comprising:

forming, on a semiconductor substrate having a (100) plane, a mesa unit including a shape extending in one direction and a pair of terraces sandwiching a region extending from the mesa unit along the longitudinal direction of the mesa unit toward a direction opposite to the mesa unit, the mesa unit and the pair of terraces being formed so that opposed units which are opposed to each other while sandwiching the region in the pair of terraces include a part whose orientation tilts in a [0-11] direction with respect to a [011] direction; and

forming a first semiconductor layer in the region between the pair of terraces and forming a second semiconductor layer which buries the mesa unit on both sides of at least a part of the mesa unit, position of an upper end of the first semiconductor layer being higher than position of an upper end of the mesa unit.

13. The method of manufacturing an optical semiconductor device according to claim 12, wherein in formation of the mesa unit and the pair of terraces, the pair of terraces is formed so that the interval between the opposed units changes.

14. The method of manufacturing an optical semiconductor device according to claim 12, wherein in formation of the mesa unit and the pair of terraces, a mask is formed on the portion where the mesa unit and the pair of terraces are to be formed, and the mesa unit and the pair of terraces are formed by using the mask so that the mesa unit extends in the region, and

further comprising, removing the mask on the part of the mesa unit extending in the region between the formation of the mesa unit and the pair of terraces and formation of the first and second semiconductor layers.

15. The method of manufacturing an optical semiconductor device according to claim 14, further comprising removing the mask except for a predetermined range on the side of the opposed units in the pair of terraces, between the formation of the mesa unit and the pair of terraces and the formation of the first and second semiconductor layers.

16. The method of manufacturing an optical semiconductor device according to claim 12, wherein in formation of the first and second semiconductor layers, the first semiconductor layer and the second semiconductor layer are formed by using gas containing chlorine.