MULTIPLE VAPOR SOURCES FOR VAPOR DEPOSITION
First Claim
1. An apparatus for vapor deposition, comprising:
- a reaction space configured to receive a substrate;
a first plurality of vessels in fluid communication with the reaction space, wherein each vessel of the first plurality of vessels contains a first source chemical; and
a controller programmed to cause delivery of pulses of gas containing the first source chemical from at least two of the first plurality of vessels to the reaction space during a deposition.
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Abstract
A vapor deposition method and apparatus including at least two vessels containing a same first source chemical. A controller is programmed to simultaneously pulse to the reaction space doses or pulses of a gas from the vessels, each of the doses having a substantially consistent concentration of the first source chemical. The apparatus may also include at least two vessels containing a same second source chemical. The controller can be programmed to simultaneously pulse to the reaction space doses or pulses of a gas from the vessels containing the second source chemical, each of the doses having a substantially consistent concentration of the second source chemical. The second source chemical can be pulsed to the reaction space after the reaction space is purged of an excess of the first source chemical.
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Citations
33 Claims
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1. An apparatus for vapor deposition, comprising:
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a reaction space configured to receive a substrate; a first plurality of vessels in fluid communication with the reaction space, wherein each vessel of the first plurality of vessels contains a first source chemical; and a controller programmed to cause delivery of pulses of gas containing the first source chemical from at least two of the first plurality of vessels to the reaction space during a deposition. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of depositing material on a substrate, comprising:
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providing the substrate in a reaction space; and after providing the substrate, delivering pulses of a vapor containing a first source chemical to the reaction space from at least two separate source vessels simultaneously. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19)
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20. A method for atomic layer deposition (ALD), comprising:
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providing a substrate; and forming a conformal thin film directly over the feature by alternatingly exposing the substrate to a first reactant species and a second reactant species in a plurality of ALD cycles, wherein the first reactant species is supplied from a plurality of separate sources during forming the conformal thin film. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32)
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33-56. -56. (canceled)
Specification