MULTIPLE VAPOR SOURCES FOR VAPOR DEPOSITION

• US 20130203267A1
• Filed: 02/06/2012
• Published: 08/08/2013
• Est. Priority Date: 02/06/2012
• Status: Active Grant

• Current Assignee: ASM IP Holding B.V. (ASM International NV)
• Original Assignee: ASM IP Holding B.V. (ASM International NV)
• Inventors: Pomarede, Christophe, Shero, Eric, Verghese, Mohith, Wang, Chang-Gong, Maes, Jan Willem
• Granted Patent: US 9,238,865 B2
• Time in Patent Office: Days
• US Class Current: 438/778
• CPC Class Codes: C23C 14/246 Replenishment of source material
• CPC Class Codes: C23C 16/045 Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
• CPC Class Codes: C23C 16/448 characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
• CPC Class Codes: C23C 16/4482 by bubbling of carrier gas through liquid source material
• CPC Class Codes: C23C 16/4485 by evaporation without using carrier gas in contact with the source material C23C16/4486 takes precedence
• CPC Class Codes: C23C 16/4486 by producing an aerosol and subsequent evaporation of the droplets or particles
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: C23C 16/45527 characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
• CPC Class Codes: C23C 16/45561 Gas plumbing upstream of the reaction chamber
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: F17C 2205/0142 bundled in parallel
• CPC Class Codes: F17C 2205/0146 with details of the manifold
• CPC Class Codes: F17C 2270/0518 Semiconductors
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01L 21/02148 the material containing hafnium, e.g. HfSiOx or HfSiON
• CPC Class Codes: H01L 21/02172 the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides materials containing silicon H01L21/02123; metal silicates H01L21/02142
• CPC Class Codes: H01L 21/02181 the material containing hafnium, e.g. HfO2
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/28194 by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition H01L21/28202 takes precedence
• CPC Class Codes: H01L 21/3142 of nano-laminates, e.g. alternating layers of Al203-Hf02
• CPC Class Codes: H01L 21/31645 : Deposition of Hafnium oxides, e.g. HfO2
• CPC Class Codes: H10B 12/038 : the capacitor being in a trench in the substrate

Abstract

A vapor deposition method and apparatus including at least two vessels containing a same first source chemical. A controller is programmed to simultaneously pulse to the reaction space doses or pulses of a gas from the vessels, each of the doses having a substantially consistent concentration of the first source chemical. The apparatus may also include at least two vessels containing a same second source chemical. The controller can be programmed to simultaneously pulse to the reaction space doses or pulses of a gas from the vessels containing the second source chemical, each of the doses having a substantially consistent concentration of the second source chemical. The second source chemical can be pulsed to the reaction space after the reaction space is purged of an excess of the first source chemical.

Claims

1. An apparatus for vapor deposition, comprising:

a reaction space configured to receive a substrate;

a first plurality of vessels in fluid communication with the reaction space, wherein each vessel of the first plurality of vessels contains a first source chemical; and

a controller programmed to cause delivery of pulses of gas containing the first source chemical from at least two of the first plurality of vessels to the reaction space during a deposition.

2. The apparatus of claim 1, wherein the controller is programmed to simultaneously supply the pulses of gas containing the first source chemical from the at least two of the first plurality of vessel during the deposition.

3. The apparatus of claim 1, wherein the controller is programmed to alternately supply the pulses of gas containing the first source chemical from the at least two of the first plurality of vessel during the deposition

4. The apparatus of claim 1, wherein the first source chemical is a solid.

5. The apparatus of claim 1, wherein the first source chemical is a liquid.

6. The apparatus of claim 1, wherein the first source chemical is HfCl₄.

7. The apparatus of claim 1, wherein the controller is programmed to cause delivery of said pulses for pulse durations in a range between about 0.1 and 10 seconds.

8. The apparatus of claim 1, further comprising a gas source containing an inactive gas, the gas source being in fluid communication with both the first plurality of vessels and the reaction space.

9. The apparatus of claim 1, further comprising a second plurality of vessels in fluid communication with the reaction space, each vessel of the second plurality of vessels containing a same second source chemical.

10. The apparatus of claim 9, wherein the controller is programmed to cause delivery of pulses of gas containing the second source chemical from at least two of the second plurality of vessels to the reaction space.

11. The apparatus of claim 10, wherein the controller is programmed so that said pulses of gas from the second plurality of vessels have a substantially consistent concentration of the second source chemical.

12. A method of depositing material on a substrate, comprising:

providing the substrate in a reaction space; and

after providing the substrate, delivering pulses of a vapor containing a first source chemical to the reaction space from at least two separate source vessels simultaneously.

13. The method of claim 12, wherein said pulses contain a substantially consistent concentration of the first source chemical.

14. The method of claim 12, further comprising:

purging the reaction space of an excess of the first source chemical after said delivering; and

delivering pulses of a vapor containing a second source chemical to the reaction space from at least two separate source vessels simultaneously after said purging.

15. The method of claim 14, wherein purging comprises flowing an inactive gas into the reaction space.

16. The method of claim 14, further comprising, after said delivering pulses of the vapor containing the second source chemical, purging the reaction space of an excess of the second source chemical.

17. The method of claim 12, wherein the first source chemical is a solid.

18. The method of claim 12, wherein the first source chemical is a liquid.

19. The method of claim 12, further comprising mixing the first source chemical with an inactive gas in the source vessels prior to said delivering.

20. A method for atomic layer deposition (ALD), comprising:

providing a substrate; and

forming a conformal thin film directly over the feature by alternatingly exposing the substrate to a first reactant species and a second reactant species in a plurality of ALD cycles, wherein the first reactant species is supplied from a plurality of separate sources during forming the conformal thin film.

21. The method of claim 20, wherein exposing comprises simultaneously pulsing the first reactant species from the plurality of sources.

22. The method of claim 20, wherein exposing comprises alternately pulsing the first reactant species from the plurality of sources.

23. The method of claim 22, wherein alternately pulsing comprises changing the source supplying the first reactant species after every two pulses of the first reactant species.

24. The method of claim 20, wherein the feature comprises a trench.

25. The method of claim 20, wherein the trench comprises a DRAM capacitor trench.

26. The method of claim 20, wherein the substrate includes a feature having an aspect ratio of at least 10:

1.

27. The method of claim 20, wherein forming the conformal thin film comprises forming a film with at least 80% step coverage on the feature.

28. The method of claim 20, wherein forming the conformal thin film comprises forming a metal oxide.

29. The method of claim 20, wherein the first reactant species comprises a metal precursor.

30. The method of claim 29, wherein exposing the substrate to the metal precursor comprises exposing the substrate to HfCl₄.

31. The method of claim 29, wherein exposing the substrate to the metal precursor comprises exposing the substrate to ZrCl₄

32. The method of claim 20, wherein the ALD cycles include supply of a third reactant species.

33-56. -56. (canceled)