Thin Film for a Lead for Brain Applications

• US 20130204318A1
• Filed: 02/08/2013
• Published: 08/08/2013
• Est. Priority Date: 02/08/2012
• Status: Active Grant

• Current Assignee: Medtronic Bakken Research Center B.V. (Medtronic Plc)
• Original Assignee: Sapiens Steering Brain Stimulation B.V. (Medtronic Plc)
• Inventors: Young, Edward Willem Albert
• Granted Patent: US 9,956,396 B2
• Time in Patent Office: Days
• US Class Current: 607/45
• CPC Class Codes: A61N 1/05 for implantation or insertion into the body, e.g. heart electrode A61N1/06 takes precedence
• CPC Class Codes: A61N 1/0534 Electrodes for deep brain stimulation
• CPC Class Codes: A61N 1/3606 adapted for a particular treatment
• CPC Class Codes: A61N 1/36125 Details of circuitry or electric components
• CPC Class Codes: H05K 1/11 Printed elements for providing electric connections to or between printed circuits
• CPC Class Codes: H05K 2203/1322 Encapsulation comprising more than one layer
• CPC Class Codes: H05K 3/108 by semi-additive methods; masks therefor characterised by metallic etch mask H05K3/062; electroplating methods or apparatus H05K3/241
• CPC Class Codes: H05K 3/16 by cathodic sputtering
• CPC Class Codes: H05K 3/28 Applying non-metallic protective coatings H05K3/0091 takes precedence; methods for intermediate insulating layers for build-up multilayer circuits H05K3/4673

Abstract

A thin film for a lead for brain applications includes at least one section comprising a high conductive metal and a low conductive metal, whereby the low conductive metal is a biocompatible metal and has a lower electrical conductivity than the high conductive metal and whereby the high conductive metal is at least partially encapsulated by the low conductive metal. Furthermore, the present invention relates to a method of manufacturing a thin film for a lead for brain applications and a deep brain stimulation system.

Claims

1. A thin film for a lead for brain applications, comprising:

at least one section comprising a high conductive metal and a low conductive metal, whereby the low conductive metal is a biocompatible metal and has a lower electrical conductivity than the high conductive metal and whereby the high conductive metal is at least partially encapsulated by the low conductive metal.

2. The thin film according to claim 1, wherein the high conductive metal is completely encapsulated by the low conductive metal and/or that the high conductive metal and the low conductive metal are at least partially encapsulated by a ceramic material.

3. The thin film according to claim 1, wherein the high conductive metal comprises gold and/or copper and/or aluminium and/or silver or is gold or copper or aluminium or silver.

4. The thin film according to claim 1, wherein the low conductive metal comprises platinum and/or titanium and/or titanium nitride or is platinum or titanium or titanium nitride.

5. The thin film according to claim 3, wherein the high conductive metal is gold and that the low conductive metal is platinum.

6. The thin film according to claim 2, wherein the ceramic material comprises SiN, SiOX, Si-Carbid and/or Alumina or that the ceramic is SiN, SiOX, Si-Carbid and/or Alumina.

7. The thin film according to claim 1, wherein the probe is at least partially encapsulated by a flexible polymer, whereby the flexible polymer is preferably a biocompatible polymer.

8. The thin film according to claim 7, wherein the flexible polymer is Parylene or SU-8 or silicone or polyimide or polyurethane.

9. The thin film according to claim 7, wherein the flexible polymer completely encapsulates the low conductive metal and/or also completely encapsulates the ceramic material.

10. The thin film according to claim 1, wherein an additional layer or pattern is arranged on the low conductive metal, whereby the layer or pattern comprises titanium or consists of titanium.

11. A method comprising:

manufacturing a thin film for a lead for brain applications, the thin film being according to claim 1.

12. The method according to claim 11, wherein the high conductive metal is completely encapsulated by the low conductive metal and whereby the high conductive metal is gold, and the low conductive metal is platinum and whereby the all sided encapsulation of gold traces is realized by conducting at least the following process steps:

sputter depositing a platinum layer;

selective gold plating of traces on the platinum layer through resist mask to form traces;

patterning of platinum; and

platinum electroplating of traces.

13. The method according to claim 12, wherein the high conductive metal is completely encapsulated by the low conductive metal and whereby the high conductive metal is gold, and the low conductive metal is platinum and whereby the all sided encapsulation of gold traces is realized by conducting at least the following process steps:

sputter depositing of a platinum layer;

selective gold plating on the platinum layer through resist mask, preferably with a negative slope, to form traces;

sputter deposition of platinum; and

patterning of platinum.

14. The method according to claim 12, wherein the high conductive metal is completely encapsulated by the low conductive metal and whereby the high conductive metal is gold, and the low conductive metal is platinum and whereby the all sided encapsulation of gold traces is realized by conducting at least the following process steps:

sputter depositing of a platinum layer;

sputter depositing of gold on the platinum layer and subsequently structure the gold to form traces, preferably with sloped edges;

sputter deposition of platinum; and

patterning of titanium or platinum.

15. A deep brain stimulation system comprising:

at least one lead with a thin film according to claim 1.