NANOSCALE EMITTERS WITH POLARIZATION GRADING
First Claim
1. A device comprising:
- a nanowire comprising a polar semiconductor material that is compositionally graded along the nanowire, the nanowire including an n-type region and a p-type region that are joined at a junction or junction region, wherein;
the compositionally graded polar semiconductor material in the n-type region has a first compositional gradient direction along the nanowire that defines an n-type polarization doping for the n-type region, andthe compositionally graded polar semiconductor material in the p-type region has a second compositional gradient direction along the nanowire that defines a p-type polarization doping for the p-type region,wherein the second compositional gradient direction along the nanowire is opposite the first compositional gradient direction along the nanowire.
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Abstract
A nanowire comprises a polar semiconductor material that is compositionally graded along the nanowire from a first end to a second end to define a polarization doping profile along the nanowire from the first end to the second end. The polar semiconductor material may comprise a group IH-nitride semiconductor, such as an alloy of GaN and AlN, or an alloy of GaN and InN. Such nanowires may be formed by nucleating the first ends on a substrate, growing the nanowires by depositing polar semiconductor material on the nucleated first ends on a selected growth face, and compositionally grading the nanowires during growth to impart the polarization doping. The direction of the compositional grading may be reversed during the growing of the nanowires to reverse the type of the imparted polarization doping. In some embodiments, the reversing forms n/p or p/n junctions in the nanowires.
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Citations
30 Claims
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1. A device comprising:
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a nanowire comprising a polar semiconductor material that is compositionally graded along the nanowire, the nanowire including an n-type region and a p-type region that are joined at a junction or junction region, wherein; the compositionally graded polar semiconductor material in the n-type region has a first compositional gradient direction along the nanowire that defines an n-type polarization doping for the n-type region, and the compositionally graded polar semiconductor material in the p-type region has a second compositional gradient direction along the nanowire that defines a p-type polarization doping for the p-type region, wherein the second compositional gradient direction along the nanowire is opposite the first compositional gradient direction along the nanowire. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A device comprising:
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at least one nanowire having a first end and an opposite second end, the nanowire comprising a polar semiconductor material that is compositionally graded along the nanowire from the first end to the second end to define a polarization doping profile along the nanowire from the first end to the second end; a first electrode electrically coupled with the first end of the at least one nanowire; and a second electrode electrically coupled with the opposite second end of the at least one nanowire. - View Dependent Claims (12, 17, 18, 19, 20, 21)
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13. The device of 12, wherein the first polar semiconductor material (X) is gallum nitride (GaN) and the second polar semiconductor material (Y) is aluminum nitride.
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14. The device of 13, wherein the first end of the nanowire comprises GaN that is not alloyed with AlN.
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15. The device of 14, wherein the junction or junction region comprises AlN that is not alloyed with GaN.
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16. The device of 14, wherein the junction or junction region comprises a quantum well having a lower Y/X ratio than material of the adjacent p-type or n-type regions.
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22. A method comprising:
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nucleating first ends of nanowires on a substrate; growing nanowires by depositing polar semiconductor material on the nucleated first ends wherein the growing is on a selected growth face; and compositionally grading the nanowires during the growing to impart polarization doping to the growing nanowires. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30)
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Specification