SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device comprising;
- a first gate electrode;
a first gate insulating film over the first gate electrode;
an oxide semiconductor film which is over the first gate insulating film and overlaps with the first gate electrode;
a source electrode and a drain electrode in contact with the oxide semiconductor filma second gate insulating film over the oxide semiconductor film, the source electrode, and the drain electrode; and
a second gate electrode over the second gate insulating film,wherein the oxide semiconductor film includes a channel region between the source electrode and the drain electrode, andwherein the second gate electrode overlaps with the channel region and the drain electrode and does not overlap with the source electrode.
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Accused Products
Abstract
A transistor using an oxide semiconductor film is provided, the transistor having a small parasitic capacitance and including a back-gate electrode with a high controllability of threshold voltage. In the transistor using an oxide semiconductor film, the back-gate electrode overlaps with a drain electrode and does not overlap with a source electrode. By providing the back-gate electrode so as to overlap with the drain electrode and not to overlap with the source electrode, the operation speed of the transistor can be increased without decreasing the controllability of threshold voltage of the transistor as compared with the case where the back-gate electrode is provided so as to overlap with both the drain electrode and the source electrode.
22 Citations
14 Claims
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1. A semiconductor device comprising;
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a first gate electrode; a first gate insulating film over the first gate electrode; an oxide semiconductor film which is over the first gate insulating film and overlaps with the first gate electrode; a source electrode and a drain electrode in contact with the oxide semiconductor film a second gate insulating film over the oxide semiconductor film, the source electrode, and the drain electrode; and a second gate electrode over the second gate insulating film, wherein the oxide semiconductor film includes a channel region between the source electrode and the drain electrode, and wherein the second gate electrode overlaps with the channel region and the drain electrode and does not overlap with the source electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising;
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a first gate electrode; a first gate insulating film over the first gate electrode; an oxide semiconductor film which is over the first gate insulating film and overlaps with the first gate electrode; a source electrode and a drain electrode in contact with the oxide semiconductor film a second gate insulating film over the oxide semiconductor film, the source electrode, and the drain electrode; and a second gate electrode over the second gate insulating film, wherein the oxide semiconductor film includes a channel region between the source electrode and the drain electrode, and wherein the first gate electrode overlaps with the channel region and the drain electrode and does not overlap with the source electrode. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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Specification
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- Resources
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsMIYAKE, Hiroyuki, KANEYASU, Makoto
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Application NumberUS13/761,399Publication NumberTime in Patent OfficeDaysField of SearchUS Class Current257/43CPC Class CodesH01L 29/42384 for thin film field effect ...H01L 29/7869 having a semiconductor body...
