ADHESION TYPE AREA SENSOR AND DISPLAY DEVICE HAVING ADHESION TYPE AREA SENSOR
First Claim
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1. A semiconductor device comprising a pixel, the pixel comprising:
- a first thin film transistor comprising a semiconductor layer, a first insulating film over the semiconductor layer, and a gate over the semiconductor layer with the first insulating film therebetween;
a photodiode comprising a photoelectric conversion layer and the first insulating film over the photoelectric conversion layer;
a sensor output wiring and a sensor electric power source line; and
a second insulating film over the gate of the first thin film transistor;
wherein the pixel is configured to irradiate the photoelectric conversion layer with light reflected by a subject,wherein a first terminal of the first thin film transistor is electrically connected to the sensor output wiring,wherein a second terminal of the first thin film transistor is electrically connected to the sensor electric power source line,wherein the gate of the first thin film transistor is electrically connected to a first terminal of the photodiode,wherein the semiconductor layer and the photoelectric conversion layer are on a same surface, andwherein the second insulating film is in contact with the first insulating film over the photoelectric conversion layer.
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Abstract
A lightweight, thin, small size semiconductor device is provided. A pixel has a display portion, and a light receiving portion comprising a photodiode. A transistor is used with the semiconductor device for controlling the operation of the display portion and the light receiving portion.
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Citations
16 Claims
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1. A semiconductor device comprising a pixel, the pixel comprising:
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a first thin film transistor comprising a semiconductor layer, a first insulating film over the semiconductor layer, and a gate over the semiconductor layer with the first insulating film therebetween; a photodiode comprising a photoelectric conversion layer and the first insulating film over the photoelectric conversion layer; a sensor output wiring and a sensor electric power source line; and a second insulating film over the gate of the first thin film transistor; wherein the pixel is configured to irradiate the photoelectric conversion layer with light reflected by a subject, wherein a first terminal of the first thin film transistor is electrically connected to the sensor output wiring, wherein a second terminal of the first thin film transistor is electrically connected to the sensor electric power source line, wherein the gate of the first thin film transistor is electrically connected to a first terminal of the photodiode, wherein the semiconductor layer and the photoelectric conversion layer are on a same surface, and wherein the second insulating film is in contact with the first insulating film over the photoelectric conversion layer. - View Dependent Claims (2, 3, 4)
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5. A semiconductor device comprising a pixel, the pixel comprising:
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first thin film transistor comprising a first semiconductor layer, a first insulating film over the first semiconductor layer, and a gate over the first semiconductor layer with the first insulating film therebetween; a photodiode comprising a photoelectric conversion layer and the first insulating film over the photoelectric conversion layer; a sensor output wiring and a sensor electric power source line; a second insulating film over the gate of the first thin film transistor; a second thin film transistor comprising a second semiconductor layer; and a pixel electrode electrically connected to the second thin film transistor, wherein the pixel is configured to irradiate the photoelectric conversion layer with light reflected by a subject, wherein a first terminal of the first thin film transistor is electrically connected to the sensor output wiring, wherein a second terminal of the first thin film transistor is electrically connected to the sensor electric power source line, wherein the gate of the first thin film transistor is electrically connected to a first terminal of the photodiode, wherein the first semiconductor layer, the second semiconductor layer and the photoelectric conversion layer are on a same surface, and wherein the second insulating film is in contact with the first insulating film over the photoelectric conversion layer. - View Dependent Claims (6, 7, 8, 9, 10)
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11. A semiconductor device comprising a pixel, the pixel comprising:
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a first thin film transistor comprising a semiconductor layer, a first insulating film over the semiconductor layer, and a gate over the semiconductor layer with the first insulating film therebetween; a photodiode comprising a photoelectric conversion layer, the first insulating film over the photoelectric conversion layer, and a gate over the photoelectric conversion layer with the first insulating film therebetween; a sensor output wiring and a sensor electric power source line; and a second insulating film over the gate of the first thin film transistor and the gate of the photodiode; wherein the pixel is configured to irradiate the photoelectric conversion layer with light reflected by a subject, wherein a first terminal of the first thin film transistor is electrically connected to the sensor output wiring, wherein a second terminal of the first thin film transistor is electrically connected to the sensor electric power source line, wherein the gate of the first thin film transistor is electrically connected to a first terminal of the photodiode, and wherein the semiconductor layer and the photoelectric conversion layer are on a same surface. - View Dependent Claims (12, 13, 14, 15, 16)
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Specification