ADHESION TYPE AREA SENSOR AND DISPLAY DEVICE HAVING ADHESION TYPE AREA SENSOR

• US 20130207125A1
• Filed: 03/15/2013
• Published: 08/15/2013
• Est. Priority Date: 01/31/2000
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Koyama, Jun
• Granted Patent: US 8,830,217 B2
• Time in Patent Office: Days
• US Class Current: 257/80
• CPC Class Codes: G09G 2360/142 the light being detected by light detection means within each pixel
• CPC Class Codes: G09G 3/3233 with pixel circuitry controlling the current through the light-emitting element
• CPC Class Codes: H01L 27/14678 Contact-type imagers
• CPC Class Codes: H01L 31/14 the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
• CPC Class Codes: H04N 25/534 depending on the spectral component
• CPC Class Codes: H04N 25/76 Addressed sensors, e.g. MOS or CMOS sensors
• CPC Class Codes: H04N 3/155 Control of the image-sensor operation, e.g. image processing within the image-sensor
• CPC Class Codes: H10K 39/00 Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/65 OLEDs integrated with inorganic image sensors

Abstract

A lightweight, thin, small size semiconductor device is provided. A pixel has a display portion, and a light receiving portion comprising a photodiode. A transistor is used with the semiconductor device for controlling the operation of the display portion and the light receiving portion.

Claims

1. A semiconductor device comprising a pixel, the pixel comprising:

a first thin film transistor comprising a semiconductor layer, a first insulating film over the semiconductor layer, and a gate over the semiconductor layer with the first insulating film therebetween;

a photodiode comprising a photoelectric conversion layer and the first insulating film over the photoelectric conversion layer;

a sensor output wiring and a sensor electric power source line; and

a second insulating film over the gate of the first thin film transistor;

wherein the pixel is configured to irradiate the photoelectric conversion layer with light reflected by a subject,

wherein a first terminal of the first thin film transistor is electrically connected to the sensor output wiring,

wherein a second terminal of the first thin film transistor is electrically connected to the sensor electric power source line,

wherein the gate of the first thin film transistor is electrically connected to a first terminal of the photodiode,

wherein the semiconductor layer and the photoelectric conversion layer are on a same surface, and

wherein the second insulating film is in contact with the first insulating film over the photoelectric conversion layer.

2. The semiconductor device according to claim 1,

wherein the light is emitted from a light emitting layer and reflected by the subject.

3. The semiconductor device according to claim 1,

wherein each of the semiconductor layer and the photoelectric conversion layer comprises crystalline silicon.

4. The semiconductor device according to claim 1,

wherein the semiconductor layer and the photoelectric conversion layer are formed over a glass substrate.

5. A semiconductor device comprising a pixel, the pixel comprising:

first thin film transistor comprising a first semiconductor layer, a first insulating film over the first semiconductor layer, and a gate over the first semiconductor layer with the first insulating film therebetween;

a photodiode comprising a photoelectric conversion layer and the first insulating film over the photoelectric conversion layer;

a sensor output wiring and a sensor electric power source line;

a second insulating film over the gate of the first thin film transistor;

a second thin film transistor comprising a second semiconductor layer; and

a pixel electrode electrically connected to the second thin film transistor,

wherein the pixel is configured to irradiate the photoelectric conversion layer with light reflected by a subject,

wherein a first terminal of the first thin film transistor is electrically connected to the sensor output wiring,

wherein a second terminal of the first thin film transistor is electrically connected to the sensor electric power source line,

wherein the gate of the first thin film transistor is electrically connected to a first terminal of the photodiode,

wherein the first semiconductor layer, the second semiconductor layer and the photoelectric conversion layer are on a same surface, and

wherein the second insulating film is in contact with the first insulating film over the photoelectric conversion layer.

6. The semiconductor device according to claim 5,

wherein the semiconductor device is a light emitting display device.

7. The semiconductor device according to claim 5, further comprising a light emitting layer electrically connected to the pixel electrode.

8. The semiconductor device according to claim 7,

wherein the light is emitted from the light emitting layer.

9. The semiconductor device according to claim 5,

wherein each of the first semiconductor layer, the second semiconductor layer, and the photoelectric conversion layer comprises crystalline silicon.

10. The semiconductor device according to claim 5,

wherein the first semiconductor layer, the second semiconductor layer, and the photoelectric conversion layer are formed over a glass substrate.

11. A semiconductor device comprising a pixel, the pixel comprising:

a first thin film transistor comprising a semiconductor layer, a first insulating film over the semiconductor layer, and a gate over the semiconductor layer with the first insulating film therebetween;

a photodiode comprising a photoelectric conversion layer, the first insulating film over the photoelectric conversion layer, and a gate over the photoelectric conversion layer with the first insulating film therebetween;

a sensor output wiring and a sensor electric power source line; and

a second insulating film over the gate of the first thin film transistor and the gate of the photodiode;

wherein the pixel is configured to irradiate the photoelectric conversion layer with light reflected by a subject,

wherein a first terminal of the first thin film transistor is electrically connected to the sensor output wiring,

wherein a second terminal of the first thin film transistor is electrically connected to the sensor electric power source line,

wherein the gate of the first thin film transistor is electrically connected to a first terminal of the photodiode, and

wherein the semiconductor layer and the photoelectric conversion layer are on a same surface.

12. The semiconductor device according to claim 11,

wherein the semiconductor device is a light emitting display device.

13. The semiconductor device according to claim 11,

wherein each of the semiconductor layer and the photoelectric conversion layer comprises crystalline silicon.

14. The semiconductor device according to claim 11,

wherein the semiconductor layer and the photoelectric conversion layer are formed over a glass substrate.

15. The semiconductor device according to claim 11, further comprising a pixel electrode and a light emitting layer electrically connected to the pixel electrode.

16. The semiconductor device according to claim 15,

wherein the light is emitted from the light emitting layer.