Method and Apparatus for Adjusting Drain Bias of A Memory Cell With Addressed and Neighbor Bits
First Claim
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1. An integrated circuit, comprising:
- a nonvolatile memory cell including;
a first current carrying terminal, a second current carrying terminal, and a gate;
a first storage part proximate to the first current carrying terminal and storing first data; and
a second storage part proximate to the second current carrying terminal and storing second data;
control circuitry applying a read bias arrangement to the first current carrying terminal, the second current carrying terminal, and the gate, the read bias arrangement applied to read one of the first data and the second data, the read bias arrangement depending on the other of the first data and the second data.
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Abstract
The storage layer such as a nitride layer of a nonvolatile memory cell has two storage parts storing separately addressable data, typically respectively proximate to the source terminal and the drain terminal. The applied drain voltage while sensing the data of one of the storage parts depends on the data stored at the other storage part. If the data stored at the other storage part is represented by a threshold voltage exceeding a minimum threshold voltage, then the applied drain voltage is raised. This technology is useful in read operations and program verify operations to widen the threshold voltage window.
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Citations
23 Claims
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1. An integrated circuit, comprising:
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a nonvolatile memory cell including; a first current carrying terminal, a second current carrying terminal, and a gate; a first storage part proximate to the first current carrying terminal and storing first data; and a second storage part proximate to the second current carrying terminal and storing second data; control circuitry applying a read bias arrangement to the first current carrying terminal, the second current carrying terminal, and the gate, the read bias arrangement applied to read one of the first data and the second data, the read bias arrangement depending on the other of the first data and the second data. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. An integrated circuit, comprising:
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a nonvolatile memory cell including; a first current carrying terminal, a second current carrying terminal, and a gate; a first storage part proximate to the first current carrying terminal and storing first data; and a second storage part proximate to the second current carrying terminal and storing second data; control circuitry applying a program verify bias arrangement to the first current carrying terminal, the second current carrying terminal, and the gate, the program verify bias arrangement applied to program verify one of the first data and the second data, the program verify bias arrangement depending on the other of the first data and the second data. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A memory method, comprising:
applying a read bias arrangement to a first current carrying terminal, a second current carrying terminal, and a gate of a nonvolatile memory cell, the read bias arrangement applied to read one of first data and the second data, the read bias arrangement depending on the other of the first data and the second data, the first data stored at a first storage part proximate to the first current carrying terminal and the second data stored at a second storage part proximate to the second current carrying terminal.
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23. A memory method, comprising:
applying a program verify bias arrangement to a first current carrying terminal, a second current carrying terminal, and a gate of a nonvolatile memory cell, the program verify bias arrangement applied to program verify one of first data and the second data, the program verify bias arrangement depending on the other of the first data and the second data, the first data stored at a first storage part proximate to the first current carrying terminal and the second data stored at a second storage part proximate to the second current carrying terminal.
Specification