TECHNIQUES FOR HANDLING MEDIA ARRAYS

• US 20130209198A1
• Filed: 02/15/2012
• Published: 08/15/2013
• Est. Priority Date: 02/15/2012
• Status: Active Grant

• Current Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Original Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Inventors: Forderhase, Paul, Blake, Julian, Weaver, William
• Granted Patent: US 8,814,239 B2
• Time in Patent Office: Days
• US Class Current: 414/222.01
• CPC Class Codes: H01L 21/67046 using mainly scrubbing means, e.g. brushes
• CPC Class Codes: H01L 21/67333 Trays for chips magazine for components H05K13/0084
• CPC Class Codes: H01L 21/67706 Mechanical details, e.g. roller, belt H01L21/67709 takes precedence
• CPC Class Codes: H01L 21/67712 the substrate being handled substantially vertically
• CPC Class Codes: H01L 21/67748 horizontal transfer of a single workpiece
• CPC Class Codes: H01L 21/67754 horizontal transfer of a batch of workpieces
• CPC Class Codes: H01L 21/67781 Batch transfer of wafers

Abstract

Techniques for handling media arrays are disclosed. The techniques may be realized as a system for handling a plurality of substrates. The system may comprise a plurality of row elements for supporting the plurality of substrates, wherein the plurality of row elements may be operable to change configuration of the substrates from open configuration to a high-density configuration, where a distance between adjacent substrates in the open configuration may be greater than a distance between the adjacent substrates in the high-density configuration.

Claims

1. A system for handling a plurality of substrates, the system comprising:

a plurality of row elements for supporting the plurality of substrates, wherein the plurality of row elements are operable to change configuration of the substrates from open configuration to a high-density configuration, wherein a distance between adjacent substrates in the open configuration is greater than a distance between the adjacent substrates in the high-density configuration.

2. The system of claim 1, wherein the plurality of row elements further comprise loop portions that glide along at least one gliding arm to form the high-density configuration.

3. The system of claim 1, wherein the plurality of row elements further comprise loop portions that glide along at least one lateral gliding arm and at least one diagonal gliding arm to form the high-density configuration.

4. The system of claim 1, wherein each substrate is a target substrate for at least one of ion implantation, deposition, etching, and annealing.

5. The system of claim 1, wherein the high-density configuration comprises at least one of a closed lateral configuration and a closed alternating configuration to optimize ion beam utilization and efficient handling of the plurality of the substrates.

6. The system of claim 1, wherein the plurality of row elements comprises a plurality of posts, wherein each of the plurality of posts comprises a ledge configured to hold the substrate and a relief portion configured to receive a transport arm of an end effector, and wherein the end effector is configured to move the plurality of transport arms into the relief portions of the posts to lift or place the plurality of the substrates.

7. An apparatus for processing a plurality of substrates, the apparatus comprising:

a housing in which the plurality of substrates are processed; and

a substrate handling system configured to support the plurality of substrates and to change a configuration of the plurality of substrates from a high-density configuration to an open configuration, wherein distance between adjacent substrates in the open configuration is greater than a distance between the adjacent substrate in the high-density configuration.

8. The apparatus of claim 7, wherein the substrate handling system comprises:

a plurality of row elements comprising;

a plurality of posts, wherein each of the plurality of posts comprises;

a post ledge configured to hold one of the plurality of substrates.

9. The apparatus of claim 8, wherein the substrate handling system further comprises:

an end effector comprising a plurality of transport arms configured to transport the plurality of substrates to and from the plurality of row elements.

10. The apparatus of claim 9, wherein each of the plurality of posts further comprises a relief portion configured to receive the transport arm of the end effector.

11. The apparatus of claim 7, wherein the substrate handling system is configured to hold the plurality of substrates in the high-density configuration during processing of the substrates and configured to hold the plurality of substrates in the open configuration during a period outside of the processing of the substrates.

12. The apparatus of claim 9, wherein the plurality of row elements is configured to change the configuration of the plurality of substrates from a high-density configuration to an open configuration.

13. The apparatus of claim 9, wherein the end effector is configured to change a configuration of the plurality of substrates from a high-density configuration to an open configuration.

14. The apparatus of claim 9, wherein each of the plurality of substrates comprises a process zone and an edge exclusion zone, wherein each of the transport arm comprises a transport arm ledge, and wherein the post ledge and the transport arm ledge are configured to hold adjacent portions of the edge exclusion.

15. The apparatus of claim 14, wherein each of the plurality of substrates comprises an inner edge and an outer edge, and wherein the edge exclusion zone comprises at least one of an inner edge exclusion zone and an outer edge exclusion zone.

16. The apparatus of claim 8, wherein the plurality of row elements is operable to form the high-density configuration, wherein the high-density configuration comprises at least one of a closed lateral configuration and a closed alternating configuration to optimize ion beam utilization and efficient handling of the plurality of the substrates.

17. The apparatus of claim 8, wherein the plurality of row elements further comprise loop portions that glide along at least one gliding arm to form the high-density configuration, wherein the at least one gliding arm is a lateral gliding arm or a diagonal gliding arm.

18. A method for handling a plurality of substrates, comprising:

receiving a plurality of substrates on a plurality of row elements in an open configuration; and

repositioning the plurality of row elements into a closed configuration using at least one gliding arm coupled to a loop portion of the plurality of row elements.

19. The method of claim 18, wherein the closed configuration comprises at least one of a closed lateral configuration and a closed alternating configuration to optimize ion beam utilization and efficient handling of the plurality of substrates.

20. The method of claim 18, wherein the at least one gliding arm is a lateral gliding arm or a diagonal gliding arm.

21. The method of claim 20, wherein receiving the plurality of substrates further comprises:

receiving the plurality of substrates from a plurality of transport arms that move into relief portions of posts on the plurality of row elements, wherein the plurality of substrates rest on ledges of the posts of the plurality of row elements.