METHOD FOR TRANSFERRING A GRAPHENE LAYER

• US 20130210218A1
• Filed: 02/08/2013
• Published: 08/15/2013
• Est. Priority Date: 02/10/2012
• Status: Active Grant

• Current Assignee: STMicroelectronics SRL (STMicroelectronics NV)
• Original Assignee: STMicroelectronics SRL (STMicroelectronics NV)
• Inventors: Accardi, Corrado, Loverso, Stella, Ravesi, Sebastiano, Sparta, Noemi Graziana
• Granted Patent: US 9,087,692 B2
• Time in Patent Office: Days
• US Class Current: 438/478
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: C01B 32/186 by chemical vapour deposition [CVD]
• CPC Class Codes: C01B 32/194 After-treatment
• CPC Class Codes: H01L 21/02527 Carbon, e.g. diamond-like carbon
• CPC Class Codes: H10K 71/80 using temporary substrates
• CPC Class Codes: H10K 99/00 Subject matter not provided for in other groups of this subclass

Abstract

A method transfers a graphene layer from a donor substrate onto a final substrate. The method includes: providing a metal layer on the donor substrate; and growing a graphene layer on the metal layer. The method also includes: laminating a dry film photo-resist on the graphene layer; laminating a tape on the dry film photo-resist; chemically. etching the metal layer, obtaining an initial structure that includes the tape, the dry film photo-resist and the graphene layer; laminating the initial structure on the final substrate; thermally realizing the tape, so as to obtain an intermediate structure that includes the dry film photo-resist, the graphene layer and the final substrate; removing the dry film photo-resist; and obtaining a final structure that includes the final substrate with a transferred graphene layer.

Claims

1. A method, comprising:

providing a metal layer;

growing a graphene layer on said metal layer;

laminating a dry film photo-resist on said graphene layer;

laminating a tape on said dry film photo-resist;

obtaining an initial structure, including said tape, said dry film photo-resist, and said graphene layer, by chemically etching away said metal layer;

laminating said initial structure on a final substrate;

obtaining an intermediate structure, including said dry film photo-resist, said graphene layer, and said final substrate, by thermally releasing said tape from the graphene layer; and

obtaining a final structure, wherein obtaining the final structure includes removing said dry film photo-resist.

2. A method according to claim 1, wherein removing the dry film photo-resist comprises chemically etching said dry film photo-resist.

3. A method according to claim 1, wherein obtaining the final structure includes:

patterning said dry film photo-resist by exposing said dry film photo-resist film to ultraviolet light through a mask; and

patterning said graphene layer by chemically etching said graphene layer through the patterned dry film photo-resist.

4. A method according to claim 1, wherein laminating the dry film photo-resist on said graphene layer comprises laminating a dry film negative photo-resist on said graphene layer.

5. A method according to claim 1, wherein said metal layer is a nickel layer or a copper layer.

6. A method according to claim 1, wherein providing said metal layer includes forming the metal layer on a donor substrate that includes at least one of a semiconductor or insulator crystal substrate, a semiconductor device substrate, an epitaxial layer, a flexible substrate, a metal film, and an organic device substrate.

7. A method according to claim 1, wherein laminating the tape on said dry film photo-resist comprises laminating a thermal releasing tape on said dry film photo-resist.

8. A method according to claim 1, wherein laminating the tape uses a thermal release tape having a release temperature in the range of 90°

C. and 200°

C. and a lamination pressure ranging between 2 bar and 5 bar.