MASK PATTERN FORMING METHOD, FINE PATTERN FORMING METHOD, AND FILM DEPOSITION APPARATUS

• US 20130213301A1
• Filed: 03/22/2013
• Published: 08/22/2013
• Est. Priority Date: 09/29/2008
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: HASEBE, Kazuhide, NAKAJIMA, Shigeru, OGAWA, Jun, MURAKAMI, Hiroki
• Granted Patent: US 10,176,992 B2
• Time in Patent Office: Days
• US Class Current: 118/720
• CPC Class Codes: C23C 16/02 Pretreatment of the material to be coated C23C16/04 takes precedence
• CPC Class Codes: C23C 16/402 Silicon dioxide
• CPC Class Codes: C23C 16/403 of aluminium, magnesium or beryllium
• CPC Class Codes: C23C 16/45536 Use of plasma, radiation or electromagnetic fields
• CPC Class Codes: G03F 7/40 Treatment after imagewise removal, e.g. baking
• CPC Class Codes: H01J 37/32091 the radio frequency energy being capacitively coupled to the plasma
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32834 Exhausting
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02178 the material containing aluminium, e.g. Al2O3
• CPC Class Codes: H01L 21/02219 the compound comprising silicon and nitrogen
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/027 Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 photographic masks or originals per se G03F1/00; registration or positioning of photographic masks or originals G03F9/00; photographic cameras G03B; control of position G05D3/00
• CPC Class Codes: H01L 21/0274 Photolithographic processes
• CPC Class Codes: H01L 21/0337 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H01L 21/0338 Process specially adapted to improve the resolution of the mask
• CPC Class Codes: H01L 21/31138 by dry-etching
• CPC Class Codes: H01L 21/31144 using masks
• CPC Class Codes: H01L 21/31608 Deposition of SiO2 H01L21/31625, H01L21/31629 and H01L21/31633 take precedence
• CPC Class Codes: H01L 21/31616 : Deposition of Al2O3
• CPC Class Codes: H01L 21/32139 : using masks
• CPC Class Codes: H01L 21/76816 : Aspects relating to the layout of the pattern or to the size of vias or trenches layout of the interconnections per se H01L23/528; CAD of ICs G06F30/00

Abstract

In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

Claims

1. A film deposition apparatus comprising:

a process chamber arranged to hold a vacuum pressure and to process a semiconductor substrate;

a source gas supplying unit arranged to supply a source gas to the process chamber; and

an oxygen radical supplying unit arranged to supply an oxygen radical or an oxygen-containing gas to the process chamber,

wherein the film deposition apparatus is arranged so that the source gas and the oxygen radical or the oxygen-containing gas are alternately supplied to the process chamber by the source gas supplying unit and the oxygen radical supplying unit, to form an oxide film over the semiconductor substrate on which resist patterns are formed, and

wherein the film deposition apparatus is arranged to perform, before the oxide film is formed over the semiconductor substrate on which the resist patterns are formed, slimming of the resist patterns by supplying the oxygen radical to the process chamber by the oxygen radical supplying unit.

2. The film deposition apparatus according to claim 1, wherein the film deposition apparatus is arranged so that the source gas and the oxygen radical or the oxygen-containing gas are alternately supplied to the process chamber to form an oxide film which uniformly covers side walls of each of the resist patterns on a coating formed through the thin film on the semiconductor substrate, and mask patterns including the coating and side wall parts of the oxide film covering the side walls of each of the resist patterns formed on the coating are formed on the thin film.

3. The film deposition apparatus according to claim 1, wherein the film deposition apparatus is arranged so that the source gas and the oxygen radical or the oxygen-containing gas are alternately supplied to the process chamber to form an oxide film which uniformly covers first resist patterns, formed through the thin film and a coating on the semiconductor substrate and having a first pitch, and second resist patterns having a second pitch equal to the first pitch and shifted by half of the first pitch so that the first resist patterns and the second resist patterns are arrayed alternately, and mask patterns including the first resist patterns and the second resist patterns are formed on the thin film.

4. A film deposition apparatus comprising:

a process chamber arranged to hold a vacuum pressure and to process a semiconductor substrate;

a source gas supplying unit arranged to supply a source gas to the process chamber; and

an oxygen radical supplying unit arranged to supply an oxygen radical or an oxygen-containing gas to the process chamber,

wherein the film deposition apparatus is arranged so that the source gas and the oxygen radical or the oxygen-containing gas are alternately supplied to the process chamber by the source gas supplying unit and the oxygen radical supplying unit, to form an oxide film over the semiconductor substrate on which line parts arranged at a predetermined pitch are formed, and

wherein the film deposition apparatus is arranged to perform, before the oxide film is formed over the semiconductor substrate on which the line parts are formed, slimming of the line parts by supplying the oxygen radical to the process chamber by the oxygen radical supplying unit.

5. The film deposition apparatus according to claim 4, wherein the source gas includes organic silicone and the oxide film is made of a silicon oxide film.

6. The film deposition apparatus according to claim 4, wherein the source gas includes an organic aluminum compound and the oxide film is made of an organic aluminum oxide film.

7. A film deposition apparatus configured to deposit an oxide film on line parts formed on a semiconductor substrate so as to isotropically cover the line parts with the oxide film by alternately supplying a source gas and one of an oxide radical and an oxygen-containing gas to the semiconductor substrate for forming a mask pattern including a film to be etched and side wall parts made of the oxide film that covers the side wall parts of the line parts arranged at a predetermined pitch, the film deposition apparatus comprising:

a process chamber arranged to hold a vacuum pressure and to process the semiconductor substrate;

a source gas supplying unit arranged to supply the source gas to the process chamber; and

an oxygen radical supplying unit arranged to supply the oxygen radical or the oxygen-containing gas to the process chamber,

wherein the film deposition apparatus is arranged to perform, before the oxide film is formed over the semiconductor substrate on which the line parts are formed, slimming of the line parts by supplying the oxygen radical to the process chamber by the oxygen radical supplying unit.

8. The film deposition apparatus according to claim 7, wherein the source gas includes organic silicone and the oxide film is made of a silicon oxide film.

9. The film deposition apparatus according to claim 7, wherein the source gas includes an organic aluminum compound and the oxide film is made of an organic aluminum oxide film.

10. A film deposition apparatus configured to deposit an oxide film on first line parts formed on a semiconductor substrate so as to istropically cover the first line parts with the oxide film by alternately supplying a source gas and one of an oxide radical and an oxygen-containing gas to the semiconductor substrate for forming a mask pattern including a film to be etched, a first pattern including first line parts, and a second pattern including second line parts arranged at a second pitch substantially equal to the first pitch, alternately with the first line parts by being shifted by half of the first pitch from the first line parts, the film deposition apparatus comprising:

a process chamber arranged to hold a vacuum pressure and to process the semiconductor substrate;

a source gas supplying unit arranged to supply the source gas to the process chamber; and

an oxygen radical supplying unit arranged to supply the oxygen radical or the oxygen-containing gas to the process chamber,

wherein the film deposition apparatus is arranged to perform, before the oxide film is formed over the semiconductor substrate on which the first pattern are formed, slimming of the first pattern by supplying the oxygen radical to the process chamber by the oxygen radical supplying unit.

11. The film deposition apparatus according to claim 10, wherein the source gas includes organic silicone and the oxide film is made of a silicon oxide film.

12. The film deposition apparatus according to claim 10, wherein the source gas includes an organic aluminum compound and the oxide film is made of an organic aluminum oxide film.