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DEVICE AND DEVICE MANUFACTURE METHOD

  • US 20130213561A1
  • Filed: 03/12/2013
  • Published: 08/22/2013
  • Est. Priority Date: 11/08/2007
  • Status: Active Grant
First Claim
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1. A device manufacture method, comprising:

  • sputtering a first surface of a first substrate mainly containing silicon dioxide; and

    preparing a bonded substrate by contacting said first surface with a second surface of a second substrate mainly containing silicon, compound semiconductor, silicon dioxide, or fluoride via a bonding functional intermediate layer to thereby bond said first substrate to said second substrate,wherein material of said bonding functional intermediate layer is selected from among optically transparent materials which are oxide, fluoride, or nitride, the materials being different from the main component of the first substrate, and different from the main component of the second substrate.

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