DEVICE AND DEVICE MANUFACTURE METHOD

• US 20130213561A1
• Filed: 03/12/2013
• Published: 08/22/2013
• Est. Priority Date: 11/08/2007
• Status: Active Grant

• Current Assignee: National Institute of Advanced Industrial Science and Technology (Government of Japan), Mitsubishi Heavy Industries Machine Tool Co., Ltd. (Nidec Corporation)
• Original Assignee: Jun Utsumi
• Inventors: Goto, Takayuki, Ide, Kensuke, Takagi, Hideki, UTSUMI, Jun, Funayama, Masahiro
• Granted Patent: US 8,936,998 B2
• Time in Patent Office: Days
• US Class Current: 156/151
• CPC Class Codes: C03C 27/06 Joining glass to glass by processes other than fusing fusing C03B23/20; units for use as elements for closing wall or like openings and comprising two or more parallel glass panes in spaced relationship, the panes being permanently secured together E06B3/66
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187
• CPC Class Codes: H01L 2224/83099 Ambient temperature
• CPC Class Codes: H01L 2224/8385 using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
• CPC Class Codes: H01L 2224/83894 Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
• CPC Class Codes: H01L 24/28 Structure, shape, material or disposition of the layer connectors prior to the connecting process
• CPC Class Codes: H01L 24/31 Structure, shape, material or disposition of the layer connectors after the connecting process
• CPC Class Codes: H01L 24/75 Apparatus for connecting with bump connectors or layer connectors
• CPC Class Codes: H01L 24/83 using a layer connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01012 Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 Phosphorus [P]
• CPC Class Codes: H01L 2924/01018 Argon [Ar]
• CPC Class Codes: H01L 2924/0102 Calcium [Ca]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/0104 Zirconium [Zr]
• CPC Class Codes: H01L 2924/0105 Tin [Sn]
• CPC Class Codes: H01L 2924/01051 Antimony [Sb]
• CPC Class Codes: H01L 2924/01072 : Hafnium [Hf]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/07802 : not being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/1461 : MEMS
• CPC Class Codes: H01L 2924/3512 : Cracking
• CPC Class Codes: H01L 31/0203 : Containers; Encapsulations , e.g. encapsulation of photodiodesfor photovoltaic devices H01L31/048; for organic photosensitive devices H10K30/80
• CPC Class Codes: H01L 33/0093 : Wafer bonding; Removal of the growth substrate

Abstract

A device is provided with: a first substrate mainly containing silicon dioxide; a second substrate mainly containing silicon, compound semiconductor, silicon dioxide or fluoride; and a bonding functional intermediate layer arranged between the first substrate and the second substrate. The first substrate is bonded to the second substrate thorough room temperature bonding in which a sputtered first surface of the first substrate is contacted with a sputtered second surface of the second substrate via the bonding functional intermediate layer. Here, the material of the bonding functional intermediate layer is selected from among optically transparent materials which are oxide, fluoride, or nitride, the materials being different from the main component of the first substrate and different from the main component of the second substrate.

Claims

1. A device manufacture method, comprising:

sputtering a first surface of a first substrate mainly containing silicon dioxide; and

preparing a bonded substrate by contacting said first surface with a second surface of a second substrate mainly containing silicon, compound semiconductor, silicon dioxide, or fluoride via a bonding functional intermediate layer to thereby bond said first substrate to said second substrate,

wherein material of said bonding functional intermediate layer is selected from among optically transparent materials which are oxide, fluoride, or nitride, the materials being different from the main component of the first substrate, and different from the main component of the second substrate.

2. The device manufacture method according to claim 1, wherein said first surface is subject to sputtering after said bonding functional intermediate layer is formed thereon.

3. The device manufacture method according to claim 2, further comprising:

sputtering said second surface simultaneously with the sputtering of said first surface.

4. The device manufacture method according to any one of claim 1, wherein said first substrate is quartz glass, glass or quartz having a crystal structure.

5. The device manufacture method according to claim 4, wherein said second substrate is quartz glass, glass or quartz having a crystal structure.

6. The device manufacture method according to claim 5, wherein material of said bonding functional intermediate layer is aluminum oxide, titanium dioxide, zirconium dioxide, or hafnium dioxide.

7. The device manufacture method according to claim 2, wherein said first substrate is quartz glass or quartz having a crystal structure.

8. The device manufacture method according to claim 3, wherein said first substrate is quartz glass, glass or quartz having a crystal structure.