METHOD AND SYSTEM FOR SUPPLYING A CLEANING GAS INTO A PROCESS CHAMBER

• US 20130213574A1
• Filed: 11/14/2012
• Published: 08/22/2013
• Est. Priority Date: 06/19/2008
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Sankarakrishnan, Ramprakash, Du Bois, Dale R., Balasubramanian, Ganesh, Janakiraman, Karthik, Rocha-Alvarez, Juan Carlos, Nowak, Thomas, Sivaramakrishnan, Visweswaren, M'Saad, Hichem
• Granted Patent: US 8,591,699 B2
• Time in Patent Office: Days
• US Class Current: 156/345.31
• CPC Class Codes: B08B 5/00 Cleaning by methods involving the use of air flow or gas flow B08B6/00 takes precedence
• CPC Class Codes: B08B 7/0021 by liquid gases or supercritical fluids
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: C23C 16/4409 characterised by sealing means
• CPC Class Codes: C23C 16/45561 Gas plumbing upstream of the reaction chamber
• CPC Class Codes: F16K 1/221 specially adapted operating means therefor operating means per se F16K31/00
• CPC Class Codes: F16K 1/224 Details of bearings for the axis of rotation
• CPC Class Codes: F16K 31/06 using a magnet , e.g. diaphragm valves, cutting off by means of a liquid
• CPC Class Codes: F16K 31/0655 Lift valves
• CPC Class Codes: F16K 31/088 the movement of the first magnet being a rotating or pivoting movement
• CPC Class Codes: Y10S 438/905 Cleaning of reaction chamber

Abstract

A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.

Claims

1. A processing chamber comprising:

a chamber body defining at least a first processing region and a second processing region, wherein the chamber body has;

a first entry port formed above the first processing region and coupled to a first gas distribution assembly disposed over a top portion of the first processing region;

a second entry port formed above the second processing region and coupled to a second gas distribution assembly disposed over a top portion of the second processing region;

a first vertical passage extending downward through a chamber wall;

one or more first cross channels open to a bottom portion of the first processing region and intersecting the first vertical passage;

a second vertical passage extending downward through the chamber wall; and

one or more second cross channels open to a bottom portion of the second processing region and intersecting the second vertical passage;

a remote plasma source configured to provide a cleaning plasma towards the top portions and/or bottom portions of the first and second processing regions;

a first gas conduit connecting the remote plasma source to the first and second entry ports; and

a valve having an inlet coupled to the first gas conduit and at least one outlet coupled to the first and second vertical passages, wherein opening of the valve selectively diverts a portion of the cleaning plasma from the remote plasma source to the bottom portions of the first and second processing regions.

2. The processing chamber of claim 1, further comprising a processing gas source coupled to the first gas conduit.

3. The processing chamber of claim 1, further comprising a second gas conduit connecting between the valve and the first and second vertical passages.

4. The processing chamber of claim 1, wherein the valve comprises:

a valve body;

a movable flapper housed by the valve body; and

a coupling mechanism disposed outside the valve body operable to rotate the movable flapper.

5. The processing chamber of claim 4, wherein the flapper comprises

a flow-obstructing plate;

and

an outer body attached to the flow-obstructing plate, wherein at least one magnet is encased in the outer body of the flapper.

6. The processing chamber of claim 4, wherein the coupling mechanism is configured to rotate the flapper through magnetic interaction.

7. The processing chamber of claim 1, further comprising a source of at least one of NF₃, F₂, SF₆, Cl₂, CF₄, C₂F₆, CCl₄ or C₂Cl₆ coupled to the remote plasma source.

8. The processing chamber of claim 1, wherein the first and second cross channels are oriented to produce a substantially inward flow of gases into the corresponding processing regions.

9. The processing chamber of claim 5, wherein the valve further comprises a bearing interfacing between an end of the flow-obstructing plate and a wall of the valve body to facilitate rotation of the flapper.

10. The processing chamber of claim 9, wherein the valve further comprises a seal cup securely fixed to the valve body, and the outer body of the flapper is cylindrical and surrounded by the seal cup.

11. The process chamber of claim 10, wherein the valve further comprises an additional bearing interfacing between the outer body and the seal cup.

12. The processing chamber of claim 10, wherein the coupling mechanism comprises a U-shaped body having magnetized end portions, and the coupling mechanism is positioned outside the seal cup with the two magnetized end portions facing two opposite poles of the magnet encased in the outer body.

13. The processing chamber of claim 12, wherein the valve further comprises an actuator mounted to the valve, the actuator is one of a solenoid, air motor, electric motor and pneumatic cylinder, and the actuator rotates the coupling mechanism in a controlled manner.

14. A substrate processing system comprising:

a loadlock chamber;

a transfer chamber coupled to the loadlock chamber;

a remote plasma source; and

a processing chamber coupled to the transfer chamber, wherein the processing chamber comprises;

a chamber body defining at least a first processing region and a second processing region, wherein the chamber body has;

a first entry port formed above the first processing region and coupled to a first gas distribution assembly disposed over a top portion of the first processing region;

a second entry port formed above the second processing region and coupled to a second gas distribution assembly disposed over a top portion of the second processing region;

a first vertical passage extending downward through a chamber wall;

one or more first cross channels open to a bottom portion of the first processing region and intersecting the first vertical passage;

a second vertical passage extending downward through the chamber wall; and

one or more second cross channels open to a bottom portion of the second processing region and intersecting the second vertical passage;

a remote plasma source configured to provide a cleaning plasma towards the top portions and/or bottom portions of the first and second processing regions;

a first gas conduit connecting the remote plasma source to the first and second entry ports; and

a valve having an inlet coupled to the first gas conduit and at least one outlet coupled to the first and second vertical passages, wherein opening of the valve selectively diverts a portion of the cleaning plasma from the remote plasma source to the bottom portions of the first and second processing regions.

15. The substrate processing system of claim 14, wherein the processing chamber further comprises a processing gas source coupled to the first gas conduit.

16. The substrate processing system of claim 14, wherein the processing chamber further comprises a second gas conduit connecting between the valve and the first and second vertical passages.

17. The substrate processing system of claim 14, wherein the valve comprises:

a valve body;

a movable flapper housed by the valve body; and

a coupling mechanism disposed outside the valve body operable to rotate the movable flapper.

18. The substrate processing system of claim 17, wherein the flapper comprises

a flow-obstructing plate;

and

an outer body attached to the flow-obstructing plate, wherein at least one magnet is encased in the outer body of the flapper.

19. The substrate processing system of claim 18, wherein the coupling mechanism is configured to rotate the flapper through magnetic interaction.

20. The substrate processing system of claim 14, further comprising a source of at least one of NF₃, F₂, SF₆, Cl₂, CF₄, C₂F₆, CCl₄ or C₂Cl₆ coupled to the remote plasma source.