DISPLAY DEVICE AND SEMICONDUCTOR DEVICE

• US 20130214280A1
• Filed: 03/22/2013
• Published: 08/22/2013
• Est. Priority Date: 07/21/2006
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Sato, Mizuki
• Granted Patent: US 8,969,859 B2
• Time in Patent Office: Days
• US Class Current: 257/59
• CPC Class Codes: G02F 1/1362 Active matrix addressed cells G02F1/134336, G02F1/134363 take precedence
• CPC Class Codes: H01L 27/1222 with a particular composition, shape or crystalline structure of the active layer
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1251 comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 29/786 Thin film transistors, i.e. transistors with a channel being at least partly a thin film transistors having only the source or the drain region on an insulator layer H01L29/0653; thin film FinFETs H01L29/785
• CPC Class Codes: H01L 29/78654 Monocrystalline silicon transistors
• CPC Class Codes: H01L 29/78663 Amorphous silicon transistors
• CPC Class Codes: H01L 29/78672 Polycrystalline or microcrystalline silicon transistor
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H10B 12/30 DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 59/1216 the pixel elements being capacitors
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals

Abstract

An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased.

Claims

1. (canceled)

2. A display device comprising:

a semiconductor layer including;

a first region containing a first impurity element that imparts one of n-type and p-type conductivity wherein the first region is one of a source region and a drain region;

a second region containing a second impurity element that imparts the one of n-type and p-type conductivity wherein the second region is the other of the source region and the drain region; and

a channel formation region between the source region and the drain region;

a wiring over the semiconductor layer;

an electroluminescent element over the semiconductor layer, the electroluminescent element comprising;

a first electrode;

an organic compound layer over the first electrode; and

a second electrode over the organic compound layer;

wherein the wiring is capable of supplying at least one of a current and a voltage to the electroluminescent element through the channel formation region,

wherein at least a part of the wiring overlaps with at least a part of the channel formation region,

wherein the channel formation region is capable of flowing carriers to a first direction,

wherein the wiring is capable of flowing a current to a second direction,

wherein a longitudinal direction of the first electrode is substantially parallel to the second direction,

wherein a longitudinal direction of the first region is substantially parallel to the second direction,

wherein a longitudinal direction of the second region is substantially parallel to the second direction, and

wherein the first direction is substantially perpendicular to the second direction.

3. The display device according to claim 2,

wherein the semiconductor layer comprises a third region,

wherein the third region is capable of being one electrode of a capacitor, and

wherein at least a part of a wiring overlaps with at least a part of the third region.

4. The display device according to claim 3,

wherein the channel formation region and the third region are aligned along the second direction.

5. The display device according to claim 2,

wherein a shape of the channel formation region is a rectangular shape.

6. A display module comprising the display device according to claim 2.

7. An electronic device comprising the display device according to claim 2.

8. A display device comprising:

a semiconductor layer including;

a first region containing a first impurity element that imparts one of n-type and p-type conductivity wherein the first region is one of a source region and a drain region;

a second region containing a second impurity element that imparts the one of n-type and p-type conductivity wherein the second region is the other of the source region and the drain region; and

a channel formation region between the source region and the drain region;

a wiring over the semiconductor layer;

an electroluminescent element over the semiconductor layer, the electroluminescent element comprising;

a first electrode;

an organic compound layer over the first electrode; and

a second electrode over the organic compound layer;

wherein the wiring is capable of supplying at least one of a current and a voltage to the electroluminescent element through the channel formation region,

wherein at least a part of the wiring overlaps with at least a part of the channel formation region,

wherein the first region, the channel formation region and the second region is aligned along a first direction,

wherein a longitudinal direction of the wiring is parallel to a second direction,

wherein a longitudinal direction of the first electrode is substantially parallel to the second direction,

wherein a longitudinal direction of the first region is substantially parallel to the second direction,

wherein a longitudinal direction of the second region is substantially parallel to the second direction, and

wherein the first direction is substantially perpendicular to the second direction.

9. The display device according to claim 8,

wherein the semiconductor layer comprises a third region,

wherein the third region is capable of being one electrode of a capacitor, and

wherein at least a part of a wiring overlaps with at least a part of the third region.

10. The display device according to claim 9, wherein the channel formation region and the third region are aligned along the second direction.

11. The display device according to claim 8,

wherein a shape of the channel formation region is a rectangular shape.

12. A display module comprising the display device according to claim 8.

13. An electronic device comprising the display device according to claim 8.

14. A display device comprising:

a transistor comprising a semiconductor layer including;

a first region containing a first impurity element that imparts one of n-type and p-type conductivity wherein the first region is one of a source region and a drain region;

a second region containing a second impurity element that imparts the one of n-type and p-type conductivity wherein the second region is the other of the source region and the drain region; and

a channel formation region between the source region and the drain region;

a wiring over the semiconductor layer;

an electroluminescent element over the semiconductor layer, the electroluminescent element comprising;

a first electrode;

an organic compound layer over the first electrode; and

a second electrode over the organic compound layer;

wherein the wiring is capable of supplying at least one of a current and a voltage to the electroluminescent element through the channel formation region,

wherein at least a part of the wiring overlaps with at least a part of the channel formation region,

wherein a channel length direction of the transistor is substantially parallel to a first direction,

wherein the wiring is capable of flowing a current to a second direction,

wherein a longitudinal direction of the first electrode is substantially parallel to the second direction,

wherein a longitudinal direction of the first region is substantially parallel to the second direction,

wherein a longitudinal direction of the second region is substantially parallel to the second direction, and

wherein the first direction is substantially perpendicular to the second direction.

15. The display device according to claim 14,

wherein the semiconductor layer comprises a third region,

wherein the third region is capable of being one electrode of a capacitor, and

wherein at least a part of a wiring overlaps with at least a part of the third region.

16. The display device according to claim 15, wherein the channel formation region and the third region are aligned along the second direction.

17. The display device according to claim 14, wherein a shape of the channel formation region is a rectangular shape.

18. A display module comprising the display device according to claim 14.

19. An electronic device comprising the display device according to claim 14.

23. The display device according to claim 19,

wherein a shape of the channel formation region is a rectangular shape.

20. A display device comprising:

a transistor comprising a semiconductor layer including;

a first region containing a first impurity element that imparts one of n-type and p-type conductivity wherein the first region is one of a source region and a drain region;

a second region containing a second impurity element that imparts the one of n-type and p-type conductivity wherein the second region is the other of the source region and the drain region; and

a channel formation region between the source region and the drain region;

a wiring over the semiconductor layer;

an electroluminescent element over the semiconductor layer, the electroluminescent element comprising;

a first electrode;

an organic compound layer over the first electrode; and

a second electrode over the organic compound layer;

wherein the wiring is capable of supplying at least one of a current and a voltage to the electroluminescent element through the channel formation region,

wherein at least a part of the wiring overlaps with at least a part of the channel formation region,

wherein a channel length direction of the transistor is substantially parallel to a first direction,

wherein a longitudinal direction of the wiring is parallel to a second direction,

wherein a longitudinal direction of the first electrode is substantially parallel to the second direction,

wherein a longitudinal direction of the first region is substantially parallel to the second direction,

wherein a longitudinal direction of the second region is substantially parallel to the second direction, and

wherein the first direction is substantially perpendicular to the second direction.

21. The display device according to claim 20,

wherein the semiconductor layer comprises a third region,

wherein the third region is capable of being one electrode of a capacitor, and

wherein at least a part of a wiring overlaps with at least a part of the third region.

22. The display device according to claim 21,

wherein the channel formation region and the third region are aligned along the second direction.

24. A display module comprising the display device according to claim 20.

25. An electronic device comprising the display device according to claim 20.

26. A display device comprising:

a semiconductor layer including;

a first region containing a first impurity element that imparts one of n-type and p-type conductivity wherein the first region is one of a source region and a drain region;

a second region containing a second impurity element that imparts the one of n-type and p-type conductivity wherein the second region is the other of the source region and the drain region; and

a channel formation region between the source region and the drain region;

a wiring over the semiconductor layer;

an electroluminescent element over the semiconductor layer, the electroluminescent element comprising;

a first electrode;

an organic compound layer over the first electrode; and

a second electrode over the organic compound layer;

wherein the wiring is electrically connected to one of the first region and the second region,

wherein the first electrode is electrically connected to the other of the first region and the second region,

wherein at least a part of the wiring overlaps with at least a part of the channel formation region,

wherein the channel formation region is capable of flowing carriers to a first direction,

wherein the wiring is capable of flowing a current to a second direction,

wherein a longitudinal direction of the first electrode is substantially parallel to the second direction,

wherein a longitudinal direction of the first region is substantially parallel to the second direction,

wherein a longitudinal direction of the second region is substantially parallel to the second direction, and

wherein the first direction is substantially perpendicular to the second direction.

27. The display device according to claim 26,

wherein the semiconductor layer comprises a third region,

wherein the third region is capable of being one electrode of a capacitor, and

wherein at least a part of a wiring overlaps with at least a part of the third region.

28. The display device according to claim 27, wherein the channel formation region and the third region are aligned along the second direction.

29. The display device according to claim 26, wherein a shape of the channel formation region is a rectangular shape.

30. A display module comprising the display device according to claim 26.

31. An electronic device comprising the display device according to claim 26.

32. A display device comprising:

a semiconductor layer including;

a first region containing a first impurity element that imparts one of n-type and p-type conductivity wherein the first region is one of a source region and a drain region;

a second region containing a second impurity element that imparts the one of n-type and p-type conductivity wherein the second region is the other of the source region and the drain region; and

a channel formation region between the source region and the drain region;

a wiring over the semiconductor layer;

an electroluminescent element over the semiconductor layer, the electroluminescent element comprising;

a first electrode;

an organic compound layer over the first electrode; and

a second electrode over the organic compound layer;

wherein the wiring is electrically connected to one of the first region and the second region,

wherein the first electrode is electrically connected to the other of the first region and the second region,

wherein at least a part of the wiring overlaps with at least a part of the channel formation region,

wherein the first region, the channel formation region and the second region is aligned along a first direction,

wherein a longitudinal direction of the wiring is parallel to a second direction,

wherein a longitudinal direction of the first electrode is substantially parallel to the second direction,

wherein a longitudinal direction of the first region is substantially parallel to the second direction,

wherein a longitudinal direction of the second region is substantially parallel to the second direction, and

wherein the first direction is substantially perpendicular to the second direction.

33. The display device according to claim 32,

wherein the semiconductor layer comprises a third region,

wherein the third region is capable of being one electrode of a capacitor, and

wherein at least a part of a wiring overlaps with at least a part of the third region.

34. The display device according to claim 33, wherein the channel formation region and the third region are aligned along the second direction.

35. The display device according to claim 32, wherein a shape of the channel formation region is a rectangular shape.

36. A display module comprising the display device according to claim 32.

37. An electronic device comprising the display device according to claim 32.

38. A display device comprising:

a transistor comprising a semiconductor layer including;

a first region containing a first impurity element that imparts one of n-type and p-type conductivity wherein the first region is one of a source region and a drain region;

a second region containing a second impurity element that imparts the one of n-type and p-type conductivity wherein the second region is the other of the source region and the drain region; and

a channel formation region between the source region and the drain region;

a wiring over the semiconductor layer;

an electroluminescent element over the semiconductor layer, the electroluminescent element comprising;

a first electrode;

an organic compound layer over the first electrode; and

a second electrode over the organic compound layer;

wherein the wiring is electrically connected to one of the first region and the second region,

wherein the first electrode is electrically connected to the other of the first region and the second region,

wherein at least a part of the wiring overlaps with at least a part of the channel formation region,

wherein a channel length direction of the transistor is substantially parallel to a first direction,

wherein the wiring is capable of flowing a current to a second direction,

wherein a longitudinal direction of the first electrode is substantially parallel to the second direction,

wherein a longitudinal direction of the first region is substantially parallel to the second direction,

wherein a longitudinal direction of the second region is substantially parallel to the second direction, and

wherein the first direction is substantially perpendicular to the second direction.

39. The display device according to claim 38,

wherein the semiconductor layer comprises a third region,

wherein the third region is capable of being one electrode of a capacitor, and

wherein at least a part of a wiring overlaps with at least a part of the third region.

40. The display device according to claim 39, wherein the channel formation region and the third region are aligned along the second direction.

41. The display device according to claim 38, wherein a shape of the channel formation region is a rectangular shape.

42. A display module comprising the display device according to claim 38.

43. An electronic device comprising the display device according to claim 38.

44. A display device comprising:

a transistor comprising a semiconductor layer including;

a first region containing a first impurity element that imparts one of n-type and p-type conductivity wherein the first region is one of a source region and a drain region;

a second region containing a second impurity element that imparts the one of n-type and p-type conductivity wherein the second region is the other of the source region and the drain region; and

a channel formation region between the source region and the drain region;

a wiring over the semiconductor layer;

an electroluminescent element over the semiconductor layer, the electroluminescent element comprising;

a first electrode;

an organic compound layer over the first electrode; and

a second electrode over the organic compound layer;

wherein the wiring is electrically connected to one of the first region and the second region,

wherein the first electrode is electrically connected to the other of the first region and the second region,

wherein at least a part of the wiring overlaps with at least a part of the channel formation region,

wherein a channel length direction of the transistor is substantially parallel to a first direction,

wherein a longitudinal direction of the wiring is parallel to a second direction,

wherein a longitudinal direction of the first electrode is substantially parallel to the second direction,

wherein a longitudinal direction of the first region is substantially parallel to the second direction,

wherein a longitudinal direction of the second region is substantially parallel to the second direction, and

wherein the first direction is substantially perpendicular to the second direction.

45. The display device according to claim 44,

wherein the semiconductor layer comprises a third region,

wherein the third region is capable of being one electrode of a capacitor, and

wherein at least a part of a wiring overlaps with at least a part of the third region.

46. The display device according to claim 45, wherein the channel formation region and the third region are aligned along the second direction.

47. The display device according to claim 44, wherein a shape of the channel formation region is a rectangular shape.

48. A display module comprising the display device according to claim 44.

49. An electronic device comprising the display device according to claim 44.