Dual Gate Lateral MOSFET
First Claim
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1. A semiconductor device comprising:
- a substrate of a first conductivity;
a first region of a second conductivity formed over the substrate;
a body region of the first conductivity formed in the first region;
an isolation region formed in the first region;
a second region of the second conductivity formed in the first region;
a third region of the second conductivity formed in the first region, wherein the third region and the second region are formed on opposing sides of the isolation region;
a first dielectric layer formed over the first region;
a first gate formed over the first dielectric layer;
a second dielectric layer formed over the first gate; and
a second gate formed over the second dielectric layer.
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Abstract
A dual gate lateral MOSFET comprises a drift region over a substrate, an isolation region formed in the drift region and a channel region formed in the drift region. The dual gate lateral MOSFET comprises a drain region formed in the drift region and a source region formed in the channel region, wherein the source region and drain region are formed on opposing sides of the isolation region. The dual gate lateral MOSFET further comprises a first gate and a second gate formed adjacent to the source region, wherein the first gate and the second gate are stacked together and separated by a dielectric layer.
8 Citations
20 Claims
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1. A semiconductor device comprising:
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a substrate of a first conductivity; a first region of a second conductivity formed over the substrate; a body region of the first conductivity formed in the first region; an isolation region formed in the first region; a second region of the second conductivity formed in the first region; a third region of the second conductivity formed in the first region, wherein the third region and the second region are formed on opposing sides of the isolation region; a first dielectric layer formed over the first region; a first gate formed over the first dielectric layer; a second dielectric layer formed over the first gate; and a second gate formed over the second dielectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A device comprising:
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a drift region having a first conductivity type formed over a substrate; an isolation region formed in the drift region; a drain region having the first conductivity type formed in the drift region; a channel region having a second conductivity type formed in the drift region; a source region having the first conductivity type formed in the channel region, wherein the source region and drain region are formed on opposing sides of the isolation region; and a first gate and a second gate formed adjacent to the source region, wherein the first gate and the second gate are stacked together and separated by a dielectric layer. - View Dependent Claims (11, 12, 13, 14, 15)
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16. A method comprising:
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providing a substrate with a first conductivity type; growing an epitaxial layer with a second conductivity type on the substrate; forming an isolation region in the epitaxial layer; forming a body region with the first conductivity type in the epitaxial layer; implanting ions with the second conductivity type to form a drain region in the epitaxial layer; implanting ions with the second conductivity type to form a source region in the body region, wherein the source region and the drain region are on opposing sides of the isolation region; and forming a dual gate structure adjacent to the source region. - View Dependent Claims (17, 18, 19, 20)
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Specification