SEMICONDUCTOR INTEGRATED CIRCUIT, MAGNETIC DETECTING DEVICE, ELECTRONIC COMPASS, AND AMMETER

• US 20130214777A1
• Filed: 03/29/2013
• Published: 08/22/2013
• Est. Priority Date: 09/30/2010
• Status: Active Grant

• Current Assignee: Fujikura Limited
• Original Assignee: Fujikura Limited
• Inventors: Itoi, Kazuhisa
• Granted Patent: US 9,234,946 B2
• Time in Patent Office: Days
• US Class Current: 324/252
• CPC Class Codes: G01C 17/30 Earth-inductor compasses
• CPC Class Codes: G01R 33/04 using the flux-gate principle
• CPC Class Codes: G01R 33/09 Magnetoresistive devices

Abstract

A semiconductor integrated circuit includes a clock-signal control circuit controlling intensity-signal output, which is output from a signal processing circuit, to be stopped in at least a forward outage time and a backward outage time. The forward outage time is previous to an apex point of a triangular wave and having 1 to 5% of a triangular wave period. The backward outage time is subsequent to the apex point of the triangular wave and having 1 to 5% of a triangular wave period.

Claims

1. A semiconductor integrated circuit comprising:

a clock-signal generation circuit;

a signal processing circuit outputting an intensity signal corresponding to an intensity of an external magnetic field based on a time interval between a first spike-shaped voltage waveform and a second spike-shaped voltage waveform in accordance with a clock signal output from the clock-signal generation circuit, the second spike-shaped voltage waveform being detected subsequent to the first spike-shaped voltage waveform, the second spike-shaped voltage waveform having an inverse sign to that of the first spike voltage waveform; and

a clock-signal control circuit controlling intensity-signal output, which is output from the signal processing circuit, to be stopped in at least a forward outage time and a backward outage time, the forward outage time being previous to an apex point of a triangular wave and having 1 to 5% of a triangular wave period, the backward outage time being subsequent to the apex point of the triangular wave and having 1 to 5% of a triangular wave period.

2. The semiconductor integrated circuit according to claim 1, wherein

the semiconductor integrated circuit is used for a flux-gate magnetic sensor having a magnetic core, an excitation unit varying magnetic flux of the magnetic core, and a detecting coil detecting the magnetic flux of the magnetic core, and

the magnetic sensor provides a triangular wave current to the excitation unit as an excitation current, detects the first spike-shaped voltage waveform having a positive sign output from the detecting coil and the second spike-shaped voltage waveform having a negative sign, measures the time interval between the first spike-shaped voltage waveform and the second spike-shaped voltage waveform, and detects an intensity of an external magnetic field based on the time interval.

3. The semiconductor integrated circuit according to claim 1, wherein

an intensity signal of an external magnetic field at time excluding the forward outage time and the backward stop is output as a dynamic range.

4. A magnetic detecting device comprising:

a flux-gate magnetic sensor unit comprising;

a magnetic core;

a detecting coil detecting variations in magnetic flux in the magnetic core;

an excitation unit varying magnetic flux in the magnetic core in accordance with a periodic excitation current to be supplied; and

a detection unit detecting induced output generated from the detecting coil in accordance with variations in magnetic flux in the magnetic core due to the excitation unit, the flux-gate magnetic sensor unit providing a triangular wave current to the excitation unit as an excitation current, the flux-gate magnetic sensor unit detecting spike-shaped voltage waveforms having a positive sign and a negative sign output from the detecting coil, the flux-gate magnetic sensor unit measuring a time interval between a first spike-shaped voltage waveform and a second spike-shaped voltage waveform, the second spike-shaped voltage waveform being detected subsequent to the first spike-shaped voltage waveform, the second spike-shaped voltage waveform having an inverse sign to that of the first spike voltage waveform, the flux-gate magnetic sensor unit detecting an intensity of an external magnetic field based on the time interval; and

a semiconductor integrated circuit comprising;

a clock-signal generation circuit;

a signal processing circuit outputting an intensity signal corresponding to an intensity of an external magnetic field based on a time interval between the induced outputs which are detected by the detection unit and which have signs different from each other in accordance with a clock signal output from the clock-signal generation circuit; and

a clock-signal control circuit controlling intensity-signal output, which is output from the signal processing circuit, to be stopped in at least a forward outage time and a backward outage time, the forward outage time being previous to an apex point of a triangular wave and having 1 to 5% of a triangular wave period, the backward outage time being subsequent to the apex point of the triangular wave and having 1 to 5% of a triangular wave period.

5. The magnetic detecting device according to claim 4, wherein

an intensity signal of an external magnetic field at time excluding the forward outage time and the backward stop is output as a dynamic range in the semiconductor integrated circuit.

6. An electronic compass comprising:

a substrate;

a first flux-gate magnetic sensor unit, a second flux-gate magnetic sensor unit, and a third flux-gate magnetic sensor unit disposed on the substrate and arranged along three axes; and

a semiconductor integrated circuit, wherein

each of a first magnetic sensor unit, a second magnetic sensor unit, and a third magnetic sensor unit comprises;

a magnetic core;

a detecting coil detecting variations in magnetic flux in the magnetic core;

an excitation unit varying magnetic flux in the magnetic core in accordance with a periodic excitation current to be supplied; and

a detection unit detecting induced output generated from the detecting coil in accordance with variations in magnetic flux in the magnetic core due to the excitation unit,

each of the first magnetic sensor unit, the second magnetic sensor unit, and the third magnetic sensor unit provides a triangular wave current to the excitation unit as an excitation current, detects spike-shaped voltage waveforms having a positive sign and a negative sign output from the detecting coil, measures a time interval between a first spike-shaped voltage waveform and a second spike-shaped voltage waveform, detects an intensity of an external magnetic field based on the time interval, the second spike-shaped voltage waveform is detected subsequent to the first spike-shaped voltage waveform, the second spike-shaped voltage waveform has an inverse sign to that of the first spike voltage waveform, and

the semiconductor integrated circuit comprises;

a clock-signal generation circuit;

a signal processing circuit outputting an intensity signal corresponding to an intensity of an external magnetic field based on a time interval between the induced outputs which are detected by the detection unit and which have signs different from each other in accordance with a clock signal output from the clock-signal generation circuit; and

a clock-signal control circuit controlling intensity-signal output, which is output from the signal processing circuit, to be stopped in at least a forward outage time and a backward outage time, the forward outage time is previous to an apex point of a triangular wave and having 1 to 5% of a triangular wave period, the backward outage time is subsequent to the apex point of the triangular wave and having 1 to 5% of a triangular wave period.

7. The electronic compass according to claim 6, wherein

an intensity signal of an external magnetic field at time excluding the forward outage time and the backward stop is output as a dynamic range in the semiconductor integrated circuit.

8. An ammeter comprising:

a substrate;

a first flux-gate magnetic sensor unit, a second flux-gate magnetic sensor unit, and a third flux-gate magnetic sensor unit disposed on the substrate and arranged along three axes; and

a semiconductor integrated circuit, wherein

each of a first magnetic sensor unit, a second magnetic sensor unit, and a third magnetic sensor unit comprises;

a magnetic core;

a detecting coil detecting variations in magnetic flux in the magnetic core;

an excitation unit varying magnetic flux in the magnetic core in accordance with a periodic excitation current to be supplied; and

a detection unit detecting induced output generated from the detecting coil in accordance with variations in magnetic flux in the magnetic core due to the excitation unit,

each of the first magnetic sensor unit, the second magnetic sensor unit, and the third magnetic sensor unit provides a triangular wave current to the excitation unit as an excitation current, detects spike-shaped voltage waveforms having a positive sign and a negative sign output from the detecting coil, measures a time interval between a first spike-shaped voltage waveform and a second spike-shaped voltage waveform, detects an intensity of an external magnetic field based on the time interval, the second spike-shaped voltage waveform is detected subsequent to the first spike-shaped voltage waveform, the second spike-shaped voltage waveform has an inverse sign to that of the first spike voltage waveform, and

the semiconductor integrated circuit comprises;

a clock-signal generation circuit;

a signal processing circuit outputting an intensity signal corresponding to an intensity of an external magnetic field based on a time interval between the induced outputs which are detected by the detection unit and which have signs different from each other in accordance with a clock signal output from the clock-signal generation circuit; and

a clock-signal control circuit controlling intensity-signal output, which is output from the signal processing circuit, to be stopped in at least a forward outage time and a backward outage time, the forward outage time is previous to an apex point of a triangular wave and having 1 to 5% of a triangular wave period, the backward outage time is subsequent to the apex point of the triangular wave and having 1 to 5% of a triangular wave period.

9. The ammeter according to claim 8, wherein

an intensity signal of an external magnetic field at time excluding the forward outage time and the backward stop is output as a dynamic range in the semiconductor integrated circuit.