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RESISTANCE CHANGE MEMORY CELL CIRCUITS AND METHODS

  • US 20130215669A1
  • Filed: 10/26/2011
  • Published: 08/22/2013
  • Est. Priority Date: 10/29/2010
  • Status: Active Grant
First Claim
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1. A method of changing a state of a resistive change memory element of an integrated circuit device, the method comprising:

  • generating a reference current;

    biasing an access transistor coupled to the resistive change memory element to establish a bias of the access transistor; and

    ,based on the bias of the access transistor, using a current mirror to establish from the reference current, a current that flows through the resistive change memory element.

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