SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND ELECTRONIC DEVICE MANUFACTURING METHOD

• US 20130217184A1
• Filed: 01/24/2013
• Published: 08/22/2013
• Est. Priority Date: 02/17/2012
• Status: Active Grant

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: ISHIZUKI, Yoshikatsu, SASAKI, Shinya, TANI, Motoaki
• Granted Patent: US 9,214,361 B2
• Time in Patent Office: Days
• US Class Current: 438/110
• CPC Class Codes: H01L 21/56 Encapsulations, e.g. encapsulation layers, coatings
• CPC Class Codes: H01L 21/561 Batch processing
• CPC Class Codes: H01L 21/568 Temporary substrate used as encapsulation process aid H01L21/4832 and H01L21/566 take precedence
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/68327 used during dicing or grinding
• CPC Class Codes: H01L 2221/6834 used to protect an active side of a device or wafer
• CPC Class Codes: H01L 2221/68381 Details of chemical or physical process used for separating the auxiliary support from a device or wafer
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 2224/12105 Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/24195 the item being a discrete passive component
• CPC Class Codes: H01L 23/3128 the substrate having spherical bumps for external connection
• CPC Class Codes: H01L 24/19 Manufacturing methods of high density interconnect preforms
• CPC Class Codes: H01L 24/20 Structure, shape, material or disposition of high density interconnect preforms
• CPC Class Codes: H01L 24/96 the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/19105 in a side-by-side arrangement on a common die mounting substrate
• CPC Class Codes: H01L 2924/3511 Warping

Abstract

A method of manufacturing a semiconductor device, includes: placing a semiconductor element on an adhesive layer that is placed on a support body having a first through hole; placing a part in an area that includes a portion corresponding to the first through-hole, the portion being on the adhesive layer placed on the support body; forming a substrate on the adhesive layer by forming a resin layer on the adhesive layer, on which the semiconductor element and the part have been placed, the substrate including the semiconductor element, the part, and the resin layer; and detaching the substrate from the adhesive layer by pressing the part through the first through-hole.

Claims

1. A method of manufacturing a semiconductor device, the method comprising:

placing a semiconductor element on an adhesive layer that is placed on a support body having a first through hole;

placing a part in an area that includes a portion corresponding to the first through-hole, the portion being on the adhesive layer placed on the support body;

forming a substrate on the adhesive layer by forming a resin layer on the adhesive layer, on which the semiconductor element and the part have been placed, the substrate including the semiconductor element, the part, and the resin layer; and

detaching the substrate from the adhesive layer by pressing the part through the first through-hole.

2. The method according to claim 1, wherein in the placing the part, a part that has an uneven spot in a portion that faces the adhesive layer is placed as the part.

3. The method according to claim 1, wherein in the placing the part, a frame that encloses a side of the semiconductor element on the adhesive layer is placed as the part.

4. The method according to claim 1, wherein:

the adhesive layer on the support body has a second through-hole that communicates with the first through-hole; and

in the detaching the substrate from the adhesive layer, the part is pressed through the first through-hole and the second through-hole to detach the substrate from the adhesive layer.

5. The method according to claim 1, further comprising forming a first wiring layer on a surface of the substrate after the detaching the substrate from the adhesive layer, the surface having been detached from the adhesive layer, the first wiring layer including a first conductive part that is electrically connected to the semiconductor element.

6. The method according to claim 5, further comprising cutting the resin layer and the first wiring layer around the semiconductor element after the placing the first wiring layer to obtain a semiconductor package that includes the semiconductor element as well as the resin layer and the first wiring layer that have been cut.

7. The method according to claim 5, further comprising placing a post on the adhesive layer before the forming the substrate;

wherein

in the forming the substrate, the resin layer is formed on the adhesive layer, on which the semiconductor element, the part, and the post have been placed to form the substrate, which includes the semiconductor element, the part, the post, and the resin layer, on the adhesive layer,

in the forming the first wiring layer after the detaching the substrate from the adhesive layer, the first wiring layer is formed on a surface of the substrate, the surface having been detached from the adhesive layer, the first wiring layer including the first conductive part that is electrically connected to the semiconductor element and to the post; and

the forming the first wiring layer is followed by

exposing the post by grinding a surface opposite to the surface that has been detached from the adhesive layer, and

forming a second wiring layer on the surface on which the post is exposed, the second wiring layer including a second conductive part that is electrically connected to the post.

8. The method according to claim 1, wherein an adhesive force of the adhesive layer in a direction in which the substrate is detached is weaker than an adhesive force of the adhesive layer in a surface direction in which the substrate is formed.

9. A method of manufacturing a semiconductor device, the method comprising:

placing a first semiconductor element on an adhesive layer that is placed on a support body having a first through hole;

placing a first part in an area that includes a portion corresponding to the first through-hole, the portion being on the adhesive layer placed on the support body;

forming a first resin layer on the adhesive layer, on which the first semiconductor element and the first part have been placed, to form, on the adhesive layer, a first substrate that includes the first semiconductor element, the first part, and the first resin layer;

detaching the first substrate from the adhesive layer by pressing the first part through the first through-hole;

placing a second semiconductor element on the adhesive layer, from which the first substrate has been detached;

placing a second part in the area on the adhesive layer, from which the first substrate has been detached;

forming a second resin layer on the adhesive layer, on which the second semiconductor element and the second part have been placed, to form, on the adhesive layer, a second substrate that includes the second semiconductor element, the second part, and the second resin layer; and

detaching the second substrate from the adhesive layer by pressing the second part through the first through-hole.

10. The method according to claim 9, wherein:

in the placing the first part, a part that has an uneven spot in a portion that faces the adhesive layer is placed as the first part; and

in the placing the second part, a part that has an uneven spot in a portion that faces the adhesive layer is placed as the second part.

11. The method according to claim 9, wherein:

in the placing the first part, a frame that encloses a side of the first semiconductor element on the adhesive layer is placed as the first part; and

in the placing the second part, a frame that encloses a side of the second semiconductor element on the adhesive layer is placed as the second part.

12. The method according to claim 9, wherein:

the adhesive layer on the support body has a second through-hole that communicates with the first through-hole; and

in the detaching the first substrate from the adhesive layer, the first part is pressed through the first through-hole and the second through-hole to detach the first substrate from the adhesive layer; and

in the detaching the second substrate from the adhesive layer, the second part is pressed through the first through-hole and the second through-hole to detach the second substrate from the adhesive layer.

13. The method according to claim 9, wherein an adhesive force of the adhesive layer in a direction in which the first substrate and the second substrate are detached is weaker than an adhesive force of the adhesive layer in a surface direction in which the first substrate and the second substrate are formed.

14. A method of manufacturing an electronic device, the method comprising:

placing a semiconductor element on an adhesive layer that is placed on a support body having a through hole;

placing a part in an area that includes a portion corresponding to the through-hole, the portion being on the adhesive layer placed on the support body;

forming a resin layer on the adhesive layer, on which the semiconductor element and the part have been placed, to form, on the adhesive layer, a substrate that includes the semiconductor element, the part, and the resin layer;

detaching the substrate from the adhesive layer by pressing the part through the through-hole;

forming a wiring layer on a surface of the substrate after the detaching the substrate from the adhesive layer, the surface having been detached from the adhesive layer, the wiring layer including a conductive part that is electrically connected to the semiconductor element;

cutting the resin layer and the wiring layer around the semiconductor element to obtain a semiconductor package that includes the semiconductor element as well as the resin layer and the wiring layer that have been cut; and

mounting the semiconductor package on a circuit board.