FLOWABLE SILICON-AND-CARBON-CONTAINING LAYERS FOR SEMICONDUCTOR PROCESSING
First Claim
1. A method of forming a silicon-and-carbon-containing layer on a semiconductor substrate, the method comprising:
- flowing a hydrogen-containing precursor into a remote plasma region to produce a hydrogen-containing plasma effluents,combining a silicon-and-carbon-containing precursor with the hydrogen-containing plasma effluents in a substrate processing region which contains the semiconductor substrate,forming a silicon-carbon-and-hydrogen-containing layer over the semiconductor substrate, wherein the silicon-carbon-and-hydrogen-containing layer is initially flowable during deposition and the substrate processing region is plasma-free during formation of the silicon-carbon-and-hydrogen-containing layer, andtreating the silicon-carbon-and-hydrogen-containing layer to form the silicon-and-carbon-containing layer on the semiconductor substrate.
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Abstract
Methods are described for forming and curing a gapfill silicon-and-carbon-containing layer on a semiconductor substrate. The silicon and carbon constituents may come from a silicon-and-carbon-containing precursor excited by a radical hydrogen precursor that has been activated in a remote plasma region. Exemplary precursors include 1,3,5-trisilapentane (H3Si—CH2—SiH2—CH2—SiH3) as the silicon-and-carbon-containing precursor and hydrogen (H2) as the hydrogen-containing precursor. The hydrogen-containing precursor may also be a hydrocarbon, such as acetylene (C2H2) or ethylene (C2H4). The hydrogen-containing precursor is passed through a remote plasma region to form plasma effluents (the radical hydrogen precursor) which are flowed into the substrate processing region. When the silicon-and-carbon-containing precursor combines with the plasma effluents in the substrate processing region, they form a flowable silicon-carbon-and-hydrogen-containing layer on the semiconductor substrate.
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Citations
20 Claims
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1. A method of forming a silicon-and-carbon-containing layer on a semiconductor substrate, the method comprising:
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flowing a hydrogen-containing precursor into a remote plasma region to produce a hydrogen-containing plasma effluents, combining a silicon-and-carbon-containing precursor with the hydrogen-containing plasma effluents in a substrate processing region which contains the semiconductor substrate, forming a silicon-carbon-and-hydrogen-containing layer over the semiconductor substrate, wherein the silicon-carbon-and-hydrogen-containing layer is initially flowable during deposition and the substrate processing region is plasma-free during formation of the silicon-carbon-and-hydrogen-containing layer, and treating the silicon-carbon-and-hydrogen-containing layer to form the silicon-and-carbon-containing layer on the semiconductor substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification