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FLOWABLE SILICON-CARBON-NITROGEN LAYERS FOR SEMICONDUCTOR PROCESSING

  • US 20130217240A1
  • Filed: 08/21/2012
  • Published: 08/22/2013
  • Est. Priority Date: 09/09/2011
  • Status: Abandoned Application
First Claim
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1. A method of forming a dielectric layer on a semiconductor substrate, the method comprising:

  • providing a silicon-containing precursor and an energized nitrogen-containing precursor to a chemical vapor deposition chamber;

    reacting the silicon-containing precursor and the energized nitrogen-containing precursor in the chemical vapor deposition chamber to deposit a flowable silicon-carbon-nitrogen material on the substrate; and

    treating the flowable silicon-carbon-nitrogen material to form the dielectric layer on the semiconductor substrate.

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