TREATMENTS FOR DECREASING ETCH RATES AFTER FLOWABLE DEPOSITION OF SILICON-CARBON-AND-NITROGEN-CONTAINING LAYERS
First Claim
1. A method of forming a silicon-carbon-and-nitrogen-containing layer on a semiconductor substrate, the method comprising:
- forming an as-deposited silicon-carbon-and-nitrogen-containing layer on the semiconductor substrate, wherein the silicon-carbon-and-nitrogen-containing layer is initially flowable during deposition; and
treating the as-deposited silicon-carbon-and-nitrogen-containing layer to form an etch resistant silicon-carbon-and-nitrogen-containing layer, wherein the etch resistance of the etch resistant silicon-carbon-and-nitrogen-containing layer exceeds that of the as-deposited silicon-carbon-and-nitrogen-containing layer.
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Abstract
Methods are described for forming and curing a flowable silicon-carbon-and-nitrogen-containing layer on a semiconductor substrate. The silicon and carbon constituents may come from a silicon and carbon containing precursor while the nitrogen may come from a nitrogen-containing precursor that has been activated to speed the reaction of the nitrogen with the silicon-and-carbon-containing precursor at lower deposition chamber temperatures. The initially-flowable silicon-carbon-and-nitrogen-containing layer is treated to remove components which enabled the flowability, but are no longer needed after deposition. Removal of the components increases etch resistance in order to allow the gapfill silicon-carbon-and-nitrogen-containing layer to remain intact during subsequent processing. The treatments have been found to decrease the evolution of properties of the film upon exposure to atmosphere.
386 Citations
21 Claims
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1. A method of forming a silicon-carbon-and-nitrogen-containing layer on a semiconductor substrate, the method comprising:
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forming an as-deposited silicon-carbon-and-nitrogen-containing layer on the semiconductor substrate, wherein the silicon-carbon-and-nitrogen-containing layer is initially flowable during deposition; and treating the as-deposited silicon-carbon-and-nitrogen-containing layer to form an etch resistant silicon-carbon-and-nitrogen-containing layer, wherein the etch resistance of the etch resistant silicon-carbon-and-nitrogen-containing layer exceeds that of the as-deposited silicon-carbon-and-nitrogen-containing layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of forming a silicon-carbon-and-nitrogen-containing layer on a semiconductor substrate, the method comprising:
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forming an as-deposited silicon-carbon-and-nitrogen-containing layer on the semiconductor substrate, wherein the silicon-carbon-and-nitrogen-containing layer is initially flowable during deposition; and exposing the as-deposited silicon-carbon-and-nitrogen-containing layer to a high density plasma to form an etch resistant silicon-carbon-and-nitrogen-containing layer, wherein the etch resistance of the etch resistant silicon-carbon-and-nitrogen-containing layer exceeds that of the as-deposited silicon-carbon-and-nitrogen-containing layer. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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Specification