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DOPING OF DIELECTRIC LAYERS

  • US 20130217243A1
  • Filed: 08/21/2012
  • Published: 08/22/2013
  • Est. Priority Date: 09/09/2011
  • Status: Abandoned Application
First Claim
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1. A method of forming a silicon-carbon-and-nitrogen-containing layer on a semiconductor substrate, the method comprising:

  • forming an as-deposited silicon-carbon-and-nitrogen-containing layer on the semiconductor substrate in a substrate processing region, wherein the silicon-carbon-and-nitrogen-containing layer is initially flowable during deposition; and

    ion implanting the as-deposited silicon-carbon-and-nitrogen-containing layer to form an ion-implanted silicon-carbon-and-nitrogen-containing layer.

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