RF SUBSTRATE BIAS WITH HIGH POWER IMPULSE MAGNETRON SPUTTERING (HIPIMS)

• US 20130220802A1
• Filed: 04/10/2013
• Published: 08/29/2013
• Est. Priority Date: 12/12/2006
• Status: Active Grant

• Current Assignee: Evatec AG
• Original Assignee: OC Oerlikon Balzers AG (OC Oerlikon Corporation AG)
• Inventors: Weichart, Jurgen, Kadlec, Stanislav
• Granted Patent: US 10,692,707 B2
• Time in Patent Office: Days
• US Class Current: 204/298.03
• CPC Class Codes: C23C 14/3485 using pulsed power to the target
• CPC Class Codes: C23C 14/35 by application of a magnetic field, e.g. magnetron sputtering C23C14/3457 takes precedence
• CPC Class Codes: H01J 37/32045 Circuits specially adapted for controlling the glow discharge
• CPC Class Codes: H01J 37/32064 Circuits specially adapted for controlling the arc discharge for plasma torches H01H1/36
• CPC Class Codes: H01J 37/32944 Arc detection
• CPC Class Codes: H01J 37/3408 Planar magnetron sputtering
• CPC Class Codes: H01J 37/3444 Associated circuits
• CPC Class Codes: H01J 37/3467 Pulsed operation, e.g. HIPIMS

Abstract

An apparatus for generating sputtering of a target to produce a coating on a substrate is provided. The apparatus comprises a magnetron including a cathode and an anode. A power supply is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. A first switch is also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. An electrical bias device is operably connected to the substrate and configured to apply a substrate bias.

Claims

1. An apparatus for generating sputtering of a target to produce a coating on a substrate with a current density on a cathode of a magnetron between 0.1 and 10 A/cm² comprising:

a power supply operably connected to the magnetron to charge the magnetron and configured for administering a first pulse to the magnetron;

a RF electrical bias device operably connected to the substrate and configured to discharge the magnetron according to a bias pulse; and

a synchronization device operably connected to the power supply and to the RF electrical bias device;

wherein the synchronization device is configured to synchronize a frequency and a time delay of the first pulse with the bias pulse.

2. The apparatus according to claim 1, wherein the power supply is configured for administering the first pulse to the magnetron with a duty cycle for the first pulse between 0.01% and 20%, and the frequency in the range of 1 Hz to 20 kHz.

3. The apparatus according to claim 1, wherein the power supply is configured for administering the first pulse to the magnetron with a duty cycle for the first pulse between 2% and 50%.

4. The apparatus according to claim 1, wherein the synchronization device is configured to administer the bias pulse before the first pulse with the time delay between 0.1 μ

s to 500 μ

s.

5. The apparatus according to claim 1, further comprising:

a matching unit configured to match a first impedance of a plasma with a second impedance of the substrate,

wherein the matching unit is operably connected between RF electrical bias device and a chuck that holds the substrate.

6. The apparatus according to claim 5, further comprising:

a monitoring device operably connected to the chuck that holds the substrate,

wherein the monitoring device is configured to monitor an RF self-bias at the chuck, and

wherein the chuck is operably connected between the RF electrical bias device and the substrate.

7. The apparatus according to claim 1, further comprising:

a coil operably connected to the at least one capacitor; and

a second switch operably connected to discharge the magnetron and configured to discharge the magnetron according to a second pulse.

8. An apparatus for generating high power impulse sputtering of a target to produce a coating on a substrate with a current density on a cathode of a magnetron between 0.1 and 10 A/Cm² comprising

a power supply operably connected to the magnetron;

at least one capacitor operably connected to the power supply and to the magnetron;

a first switch operably connecting the power supply to the magnetron to charge the magnetron by discharging said capacitor and configured for administering a first pulse to the magnetron; and

an RF electrical bias device operably connected to the substrate and configured to apply an RF substrate bias.