SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
1. A method for manufacturing a semiconductor device comprising the steps of:
- forming an oxide semiconductor layer;
forming a gate insulating layer over the oxide semiconductor layer;
forming a gate electrode layer to overlap with the oxide semiconductor layer with the gate insulating layer interposed therebetween;
forming a first insulating layer to cover the gate insulating layer and the gate electrode layer;
introducing an impurity element through the first insulating layer to form a pair of impurity regions in the oxide semiconductor layer;
forming a second insulating layer over the first insulating layer;
etching the first insulating layer and the second insulating layer to form a sidewall insulating layer in contact with a side surface of the gate electrode layer;
forming a source electrode layer in contact with one of the pair of impurity regions; and
forming a drain electrode layer in contact with the other of the pair of impurity regions.
1 Assignment
0 Petitions
Accused Products
Abstract
An oxide semiconductor layer is formed, a gate insulating layer is formed over the oxide semiconductor layer, a gate electrode layer is formed to overlap with the oxide semiconductor layer with the gate insulating layer interposed therebetween, a first insulating layer is formed to cover the gate insulating layer and the gate electrode layer, an impurity element is introduced through the insulating layer to form a pair of impurity regions in the oxide semiconductor layer, a second insulating layer is formed over the first insulating layer, the first insulating layer and the second insulating layer are anisotropically etched to form a sidewall insulating layer in contact with a side surface of the gate electrode layer, and a source electrode layer and a drain electrode layer in contact with the pair of impurity regions are formed.
-
Citations
22 Claims
-
1. A method for manufacturing a semiconductor device comprising the steps of:
-
forming an oxide semiconductor layer; forming a gate insulating layer over the oxide semiconductor layer; forming a gate electrode layer to overlap with the oxide semiconductor layer with the gate insulating layer interposed therebetween; forming a first insulating layer to cover the gate insulating layer and the gate electrode layer; introducing an impurity element through the first insulating layer to form a pair of impurity regions in the oxide semiconductor layer; forming a second insulating layer over the first insulating layer; etching the first insulating layer and the second insulating layer to form a sidewall insulating layer in contact with a side surface of the gate electrode layer; forming a source electrode layer in contact with one of the pair of impurity regions; and forming a drain electrode layer in contact with the other of the pair of impurity regions. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
-
8. A method for manufacturing a semiconductor device comprising the steps of:
-
forming an oxide semiconductor layer; forming a gate insulating layer over the oxide semiconductor layer; forming a gate electrode layer to overlap with the oxide semiconductor layer with the gate insulating layer interposed therebetween; forming a first insulating layer to cover the gate insulating layer and the gate electrode layer; introducing an impurity element through the first insulating layer to form a pair of impurity regions in the oxide semiconductor layer; forming a second insulating layer over the first insulating layer; etching the first insulating layer and the second insulating layer to form a sidewall insulating layer in contact with a side surface of the gate electrode layer; forming a conductive layer to cover the oxide semiconductor layer, the sidewall insulating layer, and the gate electrode layer; and removing a region of the conductive layer to form a source electrode layer and a drain electrode layer, wherein the region overlaps with the gate electrode layer. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
-
-
16. A semiconductor device comprising:
-
an oxide semiconductor layer, the oxide semiconductor layer including a pair of impurity regions containing an impurity element and a channel formation region between the pair of impurity regions; a gate electrode layer over the oxide semiconductor layer; a sidewall insulating layer being in contact with a side surface of the gate electrode layer and containing the impurity element; a source electrode layer in contact with one of the pair of impurity regions; and a drain electrode layer in contact with the other of the pair of impurity regions, wherein in the pair of impurity regions, an impurity concentration in a region in contact with the source electrode layer or the drain electrode layer is higher than an impurity concentration in a region overlapping with the sidewall insulating layer. - View Dependent Claims (17, 18, 19, 20, 21, 22)
-
Specification