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LAMINATE STRUCTURE INCLUDING OXIDE SEMICONDUCTOR THIN FILM LAYER, AND THIN FILM TRANSISTOR

  • US 20130221351A1
  • Filed: 12/27/2011
  • Published: 08/29/2013
  • Est. Priority Date: 12/28/2010
  • Status: Active Grant
First Claim
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1. A stacked layer structure comprising an oxide layer and an insulating layer,the oxide layer having a carrier concentration of 1018/cm3 or less and an average crystal diameter of 1 μ

  • m or more; and

    the crystals of the oxide layer being arranged in a columnar shape on the surface of the insulating layer.

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