SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF
First Claim
1. A semiconductor light emitting device, comprising:
- a conductive substrate;
a light emitting structure disposed on the conductive substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;
a first contact layer disposed between the conductive substrate and the first conductive semiconductor layer;
a conductive via disposed to extend from the conductive substrate and penetrating the first contact layer, the first conductive semiconductor layer, and the active layer so as to be connected to the second conductive semiconductor layer; and
a current interruption region disposed in a region adjacent to the conductive via in the light emitting structure.
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Accused Products
Abstract
A semiconductor light emitting device includes a conductive substrate, a light emitting structure, a first contact layer, a conductive via and a current interruption region. The light emitting structure is disposed on the conductive substrate and includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. The first contact layer is disposed between the conductive substrate and the first conductive semiconductor layer. The conductive via is disposed to extend from the conductive substrate to be connected to the second conductive semiconductor layer. The current interruption region is disposed in a region adjacent to the conductive via in the light emitting structure.
11 Citations
17 Claims
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1. A semiconductor light emitting device, comprising:
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a conductive substrate; a light emitting structure disposed on the conductive substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a first contact layer disposed between the conductive substrate and the first conductive semiconductor layer; a conductive via disposed to extend from the conductive substrate and penetrating the first contact layer, the first conductive semiconductor layer, and the active layer so as to be connected to the second conductive semiconductor layer; and a current interruption region disposed in a region adjacent to the conductive via in the light emitting structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of fabricating a semiconductor light emitting device, the method comprising steps of:
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forming a light emitting structure by sequentially growing a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer on a semiconductor growth substrate; forming a current interruption region in a portion in the light emitting structure; forming a recess penetrating the first conductive semiconductor layer and the active layer and exposing the second conductive semiconductor layer; forming a first contact layer on the light emitting structure; forming an insulator to cover an upper portion of the first contact layer and a side wall of the recess; forming a conductive material within the recess and on the insulator to form a conductive via connected to the second conductive semiconductor layer; forming a conductive substrate on the insulator such that the conductive substrate is connected to the conductive via; and removing the semiconductor growth substrate from the light emitting structure. - View Dependent Claims (12, 13, 14, 15)
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16. A semiconductor light emitting device, comprising:
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a conductive substrate; a light emitting structure disposed on the conductive substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a first contact layer and a second contact layer, disposed between the conductive substrate and the first conductive semiconductor layer; a conductive via disposed to extend from the second contact layer and penetrating the first contact layer, the first conductive semiconductor layer, and the active layer so as to be connected to the second conductive semiconductor layer; and a current interruption region disposed in a region adjacent to the conductive via in the light emitting structure. - View Dependent Claims (17)
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Specification