Ferromagnetic Tunnel Junction Structure and Magnetoresistive Effect Device and Spintronics Device Utilizing Same

• US 20130221461A1
• Filed: 09/26/2012
• Published: 08/29/2013
• Est. Priority Date: 02/27/2012
• Status: Active Grant

• Current Assignee: National Institute for Materials Science
• Original Assignee: National Institute for Materials Science
• Inventors: Sukegawa, Hiroaki, Mitani, Seiji, Niizeki, Tomohiko, Ohkubo, Tadakatsu, Inomata, Kouichiro, Hono, Kazuhiro, Shirai, Masafumi, Miura, Yoshio, Abe, Kazutaka, Muramoto, Shingo
• Granted Patent: US 8,872,291 B2
• Time in Patent Office: Days
• US Class Current: 257/421
• CPC Class Codes: H10B 61/22 of the field-effect transistor [FET] type
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

A ferromagnetic tunnel junction structure comprising a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the tunnel barrier layer includes a crystalline non-magnetic material having constituent elements that are similar to those of an crystalline oxide that has spinel structure as a stable phase structure; the non-magnetic material has a cubic structure having a symmetry of space group Fm-3m or F-43m in which atomic arrangement in the spinel structure is disordered; and an effective lattice constant of the cubic structure is substantially half of the lattice constant of the oxide of the spinel structure.

Claims

1. A ferromagnetic tunnel junction structure comprising a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer,

wherein the tunnel barrier layer includes a crystalline non-magnetic material having constituent elements that are similar to those of an crystalline oxide that has a spinel structure as a stable phase structure;

the non-magnetic material has a cubic structure having a symmetry of space group Fm-3m or F-43m in which atomic arrangement in the spinel structure is disordered; and

an effective lattice constant of the cubic structure is substantially half of a lattice constant of the oxide of the spinel structure.

2. A tunnel junction structure according to claim 1, wherein each of the first ferromagnetic layer and the second ferromagnetic layer is composed of pure metal or an metallic alloy, and the first ferromagnetic layer and the second ferromagnetic layer are directly in contact with an upper face or a lower face of the tunnel barrier layer.

3. A ferromagnetic tunnel junction structure according to claim 1, wherein the tunnel junction structure constitute a ferromagnetic coherent tunnel junction structure that shows tunnel magneto-resistance of 80% or more and 34000% or less at room temperature due to a coherent tunnel effect.

4. A ferromagnetic tunnel junction structure according to claim 1, wherein elemental constitution of the non-magnetic material of the tunnel barrier layer is shown by (Mg_1-xAl_x)—

O, where 0<

x≦

1 is satisfied.

5. A magneto-resistive element that utilizes a ferromagnetic tunnel junction structure comprising a tunnel barrier layer and two ferromagnetic layers that sandwiches the tunnel barrier layer, wherein the ferromagnetic tunnel junction structure is a ferromagnetic tunnel junction structure according to claim 1.

6. A spin electronic device that utilizes a ferromagnetic tunnel junction structure comprising a tunnel barrier layer and two ferromagnetic layers that sandwiches the tunnel barrier layer, wherein the ferromagnetic tunnel junction structure is a ferromagnetic tunnel junction structure according to claim 1.