FIN FIELD-EFFECT TRANSISTORS HAVING CONTROLLED FIN HEIGHT AND METHOD OF MAKING
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Abstract
A semiconductor apparatus includes fin field-effect transistor (FinFETs) having controlled fin heights. The apparatus includes a high fin density area and a low fin density area. Each fin density area includes fins and dielectric material between the fins. The dielectric material includes different dopant concentrations for different fin density areas and is the same material as deposited.
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Citations
25 Claims
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1-5. -5. (canceled)
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6. A method of forming fin field-effect transistor (FinFET) device, said method comprising:
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providing a semiconductor substrate; forming a hardmask layer having a fin pattern, said fin pattern having areas of different fin density; etching a plurality of fins into the semiconductor substrate; depositing a dielectric material over the semiconductor substrate to fill spaces between hardmask pattern and the plurality of fins and to cover the hardmask pattern and the plurality of fins with the dielectric material; planarizing the semiconductor substrate to expose a portion of the hardmask layer; selectively doping areas of different fin density; removing the hardmask pattern and, etching the dielectric material between the plurality of fins to expose a top portion of the plurality of the fins. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of forming fin field-effect transistor (FinFET) device, said method comprising:
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providing a semiconductor substrate; forming a hardmask layer having a fin pattern, said fin pattern having at least two different fin density areas; etching a plurality of fins into the semiconductor substrate using the fin pattern as an etch mask; forming a dielectric material over the semiconductor substrate to fill spaces between the fin pattern of the hardmask layer and the plurality of fins and to cover the hardmask layer and the plurality of fins with the dielectric material; planarizing the semiconductor substrate to expose a portion of the hardmask layer; doping the fin density areas selectively; removing the hardmask layer and, etching the dielectric material between fins without a mask to expose a top portion of the plurality of the fins. - View Dependent Claims (17, 18, 19, 20)
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21. A method of forming fin field-effect transistor (FinFET) device, said method comprising:
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forming a first plurality of fins on a semiconductor substrate, the first plurality of fins having a first fin density; forming a second plurality of fins on the semiconductor substrate, the second plurality of fins having a second fin density different from the first fin density; filling spaces between fins of the first plurality of fins and between fins of the second plurality of fins with a dielectric material; doping the dielectric material filling spaces between fins of the first plurality of fins; and etching the dielectric material between fins of the first plurality of fins without a mask to expose a top portion of the fins of the plurality of the fins. - View Dependent Claims (22, 23, 24, 25)
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Specification