Semiconductor Device

• US 20130223584A1
• Filed: 02/25/2013
• Published: 08/29/2013
• Est. Priority Date: 02/29/2012
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Umezaki, Atsushi
• Granted Patent: US 9,036,766 B2
• Time in Patent Office: Days
• US Class Current: 377/64
• CPC Class Codes: G09G 2310/0267 Details of drivers for scan electrodes, other than drivers for liquid crystal, plasma or OLED displays
• CPC Class Codes: G09G 2310/0286 Details of a shift registers arranged for use in a driving circuit
• CPC Class Codes: G09G 3/20 for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
• CPC Class Codes: G09G 3/2092 Details of a display terminals using a flat panel, the details relating to the control arrangement of the display terminal and to the interfaces thereto suitable for both CRT and flat panel G09G5/003; specific for a CRT G09G1/165
• CPC Class Codes: G09G 3/3674 Details of drivers for scan electrodes
• CPC Class Codes: G09G 3/3677 suitable for active matrices only
• CPC Class Codes: G11C 19/28 using semiconductor elements G11C19/14, G11C19/36 take precedence
• CPC Class Codes: G11C 19/287 Organisation of a multiplicity of shift registers
• CPC Class Codes: H01L 27/088 the components being field-effect transistors with insulated gate
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays

Abstract

A semiconductor device which shifts a low-level signal is provided. In an example, a first transistor including a first terminal electrically connected to a first wiring and a second terminal electrically connected to a second wiring, a second transistor including a first terminal electrically connected to a third wiring and a second terminal electrically connected to the second wiring, a third transistor including a first terminal electrically connected to a fourth wiring and a second terminal electrically connected to a gate of the second transistor, a fourth transistor including a first terminal electrically connected to a fifth wiring, a second terminal electrically connected to a gate of the third transistor, and a gate electrically connected to a sixth wiring, and a first switch including a first terminal electrically connected to the third wiring and a second terminal electrically connected to a gate of the first transistor are included.

Claims

1. A semiconductor device comprising a first transistor, a second transistor, a third transistor, a fourth transistor, and a fifth transistor,

wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor,

wherein a gate of the second transistor is electrically connected to a gate of the fourth transistor,

wherein one of a source and a drain of the third transistor is electrically connected to the gate of the second transistor,

wherein one of a source and a drain of the fourth transistor is electrically connected to a gate of the first transistor, and

wherein one of a source and a drain of the fifth transistor is electrically connected to a gate of the third transistor.

2. The semiconductor device according to claim 1, further comprising a sixth transistor,

wherein one of a source and a drain of the sixth transistor is electrically connected to the gate of the second transistor, and

wherein a gate of the sixth transistor is electrically connected to the gate of the first transistor.

3. The semiconductor device according to claim 1, further comprising a seventh transistor,

wherein one of a source and a drain of the seventh transistor is electrically connected to the gate of the first transistor.

4. The semiconductor device according to claim 1,

wherein the first transistor, the second transistor, the third transistor, the fourth transistor, and the fifth transistor are n-channel type.

5. A shift register circuit comprising a plurality of the semiconductor devices according to claim 2.

6. A shift register circuit comprising a plurality of the semiconductor devices according to claim 3.

7. An electronic device comprising the semiconductor device according to claim 1.

8. The electronic device according to claim 7, wherein the electronic device is one selected from the group consisting of a display device, personal computer, a mobile phone and a camera.

9. A semiconductor device comprising a first transistor, a second transistor, a third transistor, a fourth transistor, and a first switch,

wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor,

wherein one of a source and a drain of the third transistor is electrically connected to a gate of the second transistor,

wherein one terminal of the first switch is electrically connected to a gate of the first transistor

wherein the first switch is configured to be operated by signals of the gate of the second transistor, and

wherein one of a source and a drain of the fourth transistor is electrically connected to a gate of the third transistor.

10. The semiconductor device according to claim 9, further comprising a second switch,

wherein one terminal of the second switch is electrically connected to the gate of the second transistor, and

wherein the second switch is configured to be operated by signals of the gate of the first transistor.

11. The semiconductor device according to claim 9, further comprising a third switch,

wherein one terminal of the third switch is electrically connected to the gate of the first transistor.

12. The semiconductor device according to claim 9,

wherein the first transistor, the second transistor, and the third transistor are n-channel type.

13. A shift register circuit comprising a plurality of the semiconductor devices according to claim 10.

14. A shift register circuit comprising a plurality of the semiconductor devices according to claim 11.

15. An electronic device comprising the semiconductor device according to claim 9.

16. The electronic device according to claim 15, wherein the electronic device is one selected from the group consisting of a display device, personal computer, a mobile phone and a camera.