Method for Forming Dielectric Film Containing Si-C bonds by Atomic Layer Deposition Using Precursor Containing Si-C-Si bond
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Abstract
A method of forming a dielectric film having Si—C bonds on a semiconductor substrate by atomic layer deposition (ALD), includes: (i) adsorbing a precursor on a surface of a substrate; (ii) reacting the adsorbed precursor and a reactant gas on the surface; and (iii) repeating steps (i) and (ii) to form a dielectric film having at least Si—C bonds on the substrate. The precursor has a Si—C—Si bond in its molecule, and the reactant gas is oxygen-free and halogen-free and is constituted by at least a rare gas.
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22 Claims
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1. (canceled)
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10. (canceled)
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21. A method of forming a dielectric film having Si—
- C bonds on a semiconductor substrate by atomic layer deposition (ALD), which comprises;
(i) adsorbing a precursor on a surface of a substrate, said precursor having a Si—
C—
Si bond in its molecule;(ii) reacting the adsorbed precursor and a reactant gas on the surface, wherein all the gases used in steps (i) and (ii) are oxygen-free and halogen-free, one of which gases is a rare gas; and (iii) repeating steps (i) and (ii) to form a conformal dielectric film constituted by a silicon carbide on the substrate, wherein the semiconductor substrate has patterned recesses on which the dielectric film is formed, each patterned recess including a top surface, side wall, and bottom surface, and the dielectric film has a side wall coverage of at least 75% which is defined as a ratio of thickness of film deposited on the side wall to thickness of film deposited on the top surface, and wherein the precursor consists of one or more compounds selected from the group consisting of; - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 11, 12, 13, 14, 17, 18, 19, 20)
- C bonds on a semiconductor substrate by atomic layer deposition (ALD), which comprises;
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22. A method of forming a dielectric film having Si—
- C bonds on a semiconductor substrate by atomic layer deposition (ALD), which comprises;
(i) adsorbing a precursor on a surface of a substrate, said precursor having a Si—
C—
Si bond in its molecule;(ii) reacting the adsorbed precursor and a reactant gas on the surface, wherein all the gases used in steps (i) and (ii) are oxygen-free and halogen-free, one of which gases is a rare gas; and (iii) repeating steps (i) and (ii) to form a conformal dielectric film constituted by a silicon carbide on the substrate, wherein the semiconductor substrate has patterned recesses on which the dielectric film is formed, each patterned recess including a top surface, side wall, and bottom surface, and the dielectric film has a side wall coverage of at least 75% which is defined,as a ratio of thickness of film deposited on the side wall to thickness of film deposited on the top surface, and wherein all of the reactant gas reacting with the precursor is constituted by predominantly a rare gas in an excited state.
- C bonds on a semiconductor substrate by atomic layer deposition (ALD), which comprises;
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