SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME

• US 20130228814A1
• Filed: 04/15/2013
• Published: 09/05/2013
• Est. Priority Date: 10/15/2009
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: Hee Seok Choi, Hwan Hee Jeong, June O. Song, Sang Youl Lee
• Inventors: JEONG, Hwan Hee, LEE, Sang Youl, SONG, June O., OH, Tchang Hun, CHOI, Hee Seok, CHOI, Kwang Ki
• Granted Patent: US 9,117,971 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, an ohmic layer, an electrode layer, an adhesion layer, and a channel layer. The light-emitting structure may include a compound semiconductor layer. The electrode may be disposed on the light-emitting structure. The ohmic layer may be disposed under the light-emitting structure. The electrode layer may include a reflective metal under the ohmic layer. The adhesion layer may be disposed under the electrode layer. The channel layer may be disposed along a bottom edge of the light-emitting structure.

Claims

1. A semiconductor light-emitting device, comprising:

a conductive support member;

a metal layer on the conductive support member;

an electrode layer on the metal layer;

a plurality of compound semiconductor layers on the electrode layer and at least comprising a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer on the active layer;

a channel layer having a bottom surface that directly contacts the metal layer;

an insulating layer surrounding the plurality of compound semiconductor layers;

an electrode on the second conductivity type semiconductor layer, wherein the metal layer comprises a top surface and a bottom surface opposite to each other, the top surface comprising a first top surface and a second top surface around the first top surface and the bottom surface being substantially flat, wherein at least a portion of the first top surface directly contacts the electrode, and wherein a first height between the first top surface and the bottom surface is different from a second height of the second top surface from the bottom surface.

2. The semiconductor light-emitting device according to claim 1, wherein the first top surface is at a center area and the second top surface is at a peripheral area, the first height being less than the second height.

3. The semiconductor light-emitting device according to claim 1, wherein a second top surface comprises a first portion vertically overlapping the active layer and a second portion having no overlap with the active layer.

4. The semiconductor light-emitting device according to claim 1, wherein the electrode layer is spaced apart from the channel layer.

5. The semiconductor light-emitting device according to claim 1, wherein the metal layer surrounds a side surface of the electrode layer.

6. The semiconductor light-emitting device according to claim 1, wherein the electrode vertically overlaps a portion of the electrode.

7. The semiconductor light-emitting device according to claim 1, wherein the electrode layer has a size smaller than a size of the first conductivity type semiconductor layer.

8. The semiconductor light-emitting device according to claim 1, wherein the electrode layer has a size smaller than a size of the metal layer.

9. The semiconductor light-emitting device according to claim 1, wherein the electrode layer has no overlap with the channel layer.

10. The semiconductor light-emitting device according to claim 1, wherein insulating layer comprises a material the same as a material of the channel layer.

11. The semiconductor light-emitting device according to claim 1, wherein the channel layer includes at least one of a transparent oxide material, a transparent nitride material, or a transparent insulating material.

12. The semiconductor light-emitting device according to claim 1, further comprising:

at least one of an ohmic layer or a current blocking layer between the first conductivity type semiconductor layer and the electrode layer.

13. The semiconductor light-emitting device according to claim 1, wherein the current blocking layer includes a material having an electrical conductivity lower than that of a material of the electrode layer.

20. The semiconductor light-emitting device according to claim 1, wherein the channel layer has a bottom surface that directly contacts the metal layer.

14. A semiconductor light-emitting device, comprising:

a conductive support member;

a metal layer on the conductive support member;

an electrode layer on the metal layer;

a plurality of compound semiconductor layers on the electrode layer and at least comprising a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer on the active layer;

a channel layer on the metal layer;

an insulating layer surrounding the plurality of compound semiconductor layers;

an electrode on the second conductivity type semiconductor layer, wherein the second conductivity type semiconductor layer has a top surface that includes a roughness pattern, wherein the electrode has a bottom surface that includes substantially the same roughness pattern as a the roughness pattern of the second conductivity type semiconductor layer, wherein the metal layer comprises a top surface and a bottom surface opposite to each other, the top surface comprising a first top surface and a second top surface around the first top surface and the bottom surface being substantially flat, and wherein a first height between the first top surface and the bottom surface is different from a second height of the second top surface from the bottom surface.

15. The semiconductor light-emitting device according to claim 14, wherein the first top surface is at a center area and the second top surface is at a peripheral area, the first height being less than the second height.

16. The semiconductor light-emitting device according to claim 14, wherein a second top surface comprises a first portion vertically overlapping the active layer and a second portion having no overlap with the active layer.

17. The semiconductor light-emitting device according to claim 14, wherein the electrode layer is spaced apart from the channel layer.

18. A semiconductor light-emitting device, comprising:

a conductive support member;

a metal layer on the conductive support member;

an electrode layer on the metal layer;

a plurality of compound semiconductor layers on the electrode layer and at least comprising a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer on the active layer;

a channel layer on the metal layer;

an insulating layer surrounding the plurality of compound semiconductor layers;

an electrode on the second conductivity type semiconductor layer, wherein the electrode is spaced apart from the insulating layer, wherein the metal layer comprises a top surface and a bottom surface opposite to each other, the top surface comprising a first top surface and a second top surface around the first top surface and the bottom surface being substantially flat, and wherein a first height between the first top surface and the bottom surface is different from a second height of the second top surface from the bottom surface.

19. The semiconductor light-emitting device according to claim 18, wherein the first top surface is at a center area and the second top surface is at a peripheral area, the first height being less than the second height.