POWER MOSFET SEMICONDUCTOR
First Claim
1. A semiconductor device, comprising:
- a source metallization;
a source region of a first conductivity type, the source region being connected to the source metallization;
a body region of a second conductivity type adjacent to the source region;
a drift region of a first conductivity type adjacent to the body region;
a third conductive region of a second conductivity type buried within the drift region; and
a trench extending from the source region through the body region and at least partially into the drift region;
the trench adjoining the third conductive region and including a conductive plug and an insulating layer, which is arranged between the conductive plug and the body region, the conductive plug forming an Ohmic connection between the source metallization and the third conductive region;
the conductive plug, the insulating layer and the body region forming a field effect structure.
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Accused Products
Abstract
A semiconductor device includes a source metallization, a source region of a first conductivity type in contact with the source metallization, a body region of a second conductivity type which is adjacent to the source region. The semiconductor device further includes a first field-effect structure including a first insulated gate electrode and a second field-effect structure including a second insulated gate electrode which is electrically connected to the source metallization. The capacitance per unit area between the second insulated gate electrode and the body region is larger than the capacitance per unit area between the first insulated gate electrode and the body region.
2 Citations
10 Claims
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1. A semiconductor device, comprising:
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a source metallization; a source region of a first conductivity type, the source region being connected to the source metallization; a body region of a second conductivity type adjacent to the source region; a drift region of a first conductivity type adjacent to the body region; a third conductive region of a second conductivity type buried within the drift region; and a trench extending from the source region through the body region and at least partially into the drift region;
the trench adjoining the third conductive region and including a conductive plug and an insulating layer, which is arranged between the conductive plug and the body region, the conductive plug forming an Ohmic connection between the source metallization and the third conductive region;
the conductive plug, the insulating layer and the body region forming a field effect structure. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A converter circuit, comprising a high-side switch and at least one low-side switch connected to the high-side switch, the at least one low-side switch comprising:
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a source metallization; a source region of a first conductivity type, the source region being connected to the source metallization; a body region of a second conductivity type adjacent to the source region; a drift region of a first conductivity type adjacent to the body region; a third conductive region of a second conductivity type buried within the drift region; and a trench extending from the source region through the body region and at least partially into the drift region;
the trench adjoining the third conductive region and including a conductive plug and an insulating layer, which is arranged between the conductive plug and the body region, the conductive plug forming an Ohmic connection between the source metallization and the third conductive region. - View Dependent Claims (9, 10)
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Specification