Apparatus and Method for FinFETs
First Claim
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1. An apparatus comprising:
- a first isolation region formed in a substrate, wherein the first isolation region has a first non-vertical sidewall;
a second isolation region formed in the substrate, wherein the second isolation region has a second non-vertical sidewall;
a V-shaped groove formed in the substrate, wherein the V-shaped groove, the first non-vertical sidewall and the second non-vertical sidewall form a cloak-shaped recess in the substrate;
a cloak-shaped active region formed in the cloak-shaped recess over the substrate, wherein the cloak-shaped active region has an upper portion protruding above a top surface of the isolation region and a V-shaped bottom portion, and wherein the cloak-shaped active region comprises;
a first drain/source region;
a second drain/source region; and
a channel between the first drain/source region and the second drain/source region; and
a gate electrode wrapping the channel of the cloak-shaped active region.
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Abstract
A FinFET comprises an isolation region formed in a substrate, a cloak-shaped active region formed over the substrate, wherein the cloak-shaped active region has an upper portion protruding above a top surface of the isolation region. In addition, the FinFET comprises a gate electrode wrapping the channel of the cloak-shaped active region.
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Citations
20 Claims
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1. An apparatus comprising:
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a first isolation region formed in a substrate, wherein the first isolation region has a first non-vertical sidewall; a second isolation region formed in the substrate, wherein the second isolation region has a second non-vertical sidewall; a V-shaped groove formed in the substrate, wherein the V-shaped groove, the first non-vertical sidewall and the second non-vertical sidewall form a cloak-shaped recess in the substrate; a cloak-shaped active region formed in the cloak-shaped recess over the substrate, wherein the cloak-shaped active region has an upper portion protruding above a top surface of the isolation region and a V-shaped bottom portion, and wherein the cloak-shaped active region comprises; a first drain/source region; a second drain/source region; and a channel between the first drain/source region and the second drain/source region; and a gate electrode wrapping the channel of the cloak-shaped active region. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A device comprising:
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a first drain/source region formed in a substrate; a second drain/source region formed in the substrate; a channel between the first drain/source region and the second drain/source region, wherein the first drain/source region, the second drain/source region and the channel form a cloak-shaped active region, wherein the cloak-shaped active region has a V-shaped bottom; and a gate electrode wrapping the channel. - View Dependent Claims (10, 11, 12, 13, 14)
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9. (canceled)
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15. A method comprising:
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forming a first isolation region in a substrate; forming a second isolation region the substrate; forming a recess between the first isolation region and the second isolation region by removing a portion of the substrate; performing a surface treatment on the recess to form a cloak-shaped recess; and forming a cloak-shaped active region using an epitaxial growth. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification