Trench Electrode Arrangement
First Claim
1. A method for producing a semiconductor device, the method comprising:
- forming a trench extending from a first surface of a semiconductor body into the semiconductor body such that the trench has a first trench section and at least one second trench section adjoining the first trench section, and wherein the trench is wider in the first trench section than in the second trench section;
forming, in the at least one second trench section, a first electrode dielectrically insulated from semiconductor regions of the semiconductor body by a first dielectric layer;
forming, in the at least one second trench section, an inter-electrode dielectric layer on the first electrode; and
forming, in the at least one second trench section on the inter-electrode dielectric layer, and in the first trench section, a second electrode, such that the second electrode at least in the first trench section is dielectrically insulated from semiconductor regions of the semiconductor body by a second dielectric layer.
1 Assignment
0 Petitions
Accused Products
Abstract
A method includes forming a trench extending from a first surface of a semiconductor body into the semiconductor body such that a first trench section and at least one second trench section adjoin the first trench section, wherein the first trench section is wider than the second trench section. A first electrode is formed, in the at least one second trench section, and dielectrically insulated from semiconductor regions of the semiconductor body by a first dielectric layer. An inter-electrode dielectric layer is formed, in the at least one second trench section, on the first electrode. A second electrode is formed, in the at least one second trench section on the inter-electrode dielectric layer, and in the first trench section, such that the second electrode at least in the first trench section is dielectrically insulated from the semiconductor body by a second dielectric layer.
9 Citations
14 Claims
-
1. A method for producing a semiconductor device, the method comprising:
-
forming a trench extending from a first surface of a semiconductor body into the semiconductor body such that the trench has a first trench section and at least one second trench section adjoining the first trench section, and wherein the trench is wider in the first trench section than in the second trench section; forming, in the at least one second trench section, a first electrode dielectrically insulated from semiconductor regions of the semiconductor body by a first dielectric layer; forming, in the at least one second trench section, an inter-electrode dielectric layer on the first electrode; and forming, in the at least one second trench section on the inter-electrode dielectric layer, and in the first trench section, a second electrode, such that the second electrode at least in the first trench section is dielectrically insulated from semiconductor regions of the semiconductor body by a second dielectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
-
Specification