METHOD FOR REMOVING PHOTORESIST

• US 20130233357A1
• Filed: 09/13/2011
• Published: 09/12/2013
• Est. Priority Date: 11/30/2010
• Status: Abandoned Application

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Minamihonoki, Takashi, Hohshi, Norikazu
• Application Number:
  US13/813,573
• Publication Number:
  US 20130233357A1
• Time in Patent Office: Days
• US Class Current: 134/34
• CPC Class Codes: B08B 7/00 Cleaning by methods not provided for in a single other subclass or a single group in this subclass
• CPC Class Codes: G03F 7/423 containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
• CPC Class Codes: H01L 21/67051 using mainly spraying means, e.g. nozzles
• CPC Class Codes: H01L 21/67057 with the semiconductor substrates being dipped in baths or vessels

Abstract

The invention relates to a method for removing a photoresist capable of attaining a sufficient removal rate even using a general-purpose cleaning apparatus. A photoresist formed on a surface of a substrate is removed using supersaturated water solution of ozone. Further, it is preferred that a removal operation is performed under a condition of suppressing reduction in ozone concentration of the supersaturated water solution.

Claims

1. A method for removing a photoresist, comprising:

performing a removal operation of removing a photoresist formed on a surface of a substrate using supersaturated water solution of ozone.

2. The method of claim 1, wherein the removal operation is performed under a condition of suppressing reduction in ozone concentration of the supersaturated water solution,

3. The method of claim 2, wherein the removal operation is an operation for immersing the substrate on which a photoresist is formed in a dipping vat storing the supersaturated water solution, and

the dipping vat is composed of an airtight container in which the substrate is immersed under a condition where a pressure in the airtight container is higher than atmospheric pressure.

4. The method of claim 2, wherein the removal operation is an operation for discharging the supersaturated water solution from a nozzle to spray the supersaturated water solution to the photoresist formed on the surface of the substrate, and

the nozzle is brought close to the photoresist to perform spraying to the photoresist under a condition where a pressure applied on the supersaturated water solution is higher than atmospheric pressure.