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THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME

  • US 20130234135A1
  • Filed: 04/26/2013
  • Published: 09/12/2013
  • Est. Priority Date: 10/28/2010
  • Status: Abandoned Application
First Claim
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1. A method of manufacturing a thin film transistor in which at least a gate electrode, a gate insulating film, an active layer, a source electrode, and a drain electrode are provided on a substrate, and the source electrode and the drain electrode are formed on the active layer, comprising the steps of:

  • forming the gate insulating film; and

    heat-treating the gate insulating film,wherein the active layer is composed of an amorphous oxide semiconductor, anda first amount of moisture present in the gate insulating film is made smaller than a second amount of moisture present in the active layer.

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