THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME
First Claim
1. A method of manufacturing a thin film transistor in which at least a gate electrode, a gate insulating film, an active layer, a source electrode, and a drain electrode are provided on a substrate, and the source electrode and the drain electrode are formed on the active layer, comprising the steps of:
- forming the gate insulating film; and
heat-treating the gate insulating film,wherein the active layer is composed of an amorphous oxide semiconductor, anda first amount of moisture present in the gate insulating film is made smaller than a second amount of moisture present in the active layer.
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Abstract
A thin film transistor includes at least a gate electrode, a gate insulating film, an active layer, a source electrode and a drain electrode are provided on a substrate, with the source electrode and the drain electrode being provided on the active layer. The active layer is configured of an amorphous oxide semiconductor. A first amount of moisture present in the gate insulating film is smaller than a second amount of moisture present in the active layer.
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14 Claims
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1. A method of manufacturing a thin film transistor in which at least a gate electrode, a gate insulating film, an active layer, a source electrode, and a drain electrode are provided on a substrate, and the source electrode and the drain electrode are formed on the active layer, comprising the steps of:
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forming the gate insulating film; and heat-treating the gate insulating film, wherein the active layer is composed of an amorphous oxide semiconductor, and a first amount of moisture present in the gate insulating film is made smaller than a second amount of moisture present in the active layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A thin film transistor in which at least a gate electrode, a gate insulating film, an active layer, a source electrode, and a drain electrode are provided on a substrate, and the source electrode and the drain electrode are formed on the active layer,
wherein the active layer is composed of an amorphous oxide semiconductor, and a first amount of moisture present in the gate insulating film is smaller than a second amount of moisture present in the active layer.
Specification