SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
1. A semiconductor light emitting device, comprising:
- a substrate; and
a light emitting structure on an upper surface of the substrate and comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and second conductive semiconductor layer,wherein a bottom surface of the substrate includes a first portion and a second portion around the first portion,wherein the first portion includes a first recess and the second portion includes a second recess,wherein the first recess and the second recess are formed in a direction toward the upper surface from the bottom surface of the substrate,wherein the first recess and the second recess have a different depth from the bottom surface of the substrate,wherein the first recess is formed along a transverse direction and a longitudinal direction in the bottom surface of the substrate, andwherein the first recess and the second recess have a depth smaller than a thickness of the substrate.
1 Assignment
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Accused Products
Abstract
Disclosed are a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a substrate under a light emitting structure having an active layer. A bottom surface of the substrate includes a first portion and a second portion around the first portion, the first portion includes a first recess and the second portion includes a second recess, and the first recess and the second recess are formed in a direction toward the upper surface from the bottom surface of the substrate. The first recess and the second recess have a different depth from the bottom surface of the substrate, the first recess is formed along a transverse direction and a longitudinal direction in the bottom surface of the substrate, and the first recess and the second recess has a depth smaller than a thickness of the substrate.
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Citations
19 Claims
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1. A semiconductor light emitting device, comprising:
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a substrate; and a light emitting structure on an upper surface of the substrate and comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and second conductive semiconductor layer, wherein a bottom surface of the substrate includes a first portion and a second portion around the first portion, wherein the first portion includes a first recess and the second portion includes a second recess, wherein the first recess and the second recess are formed in a direction toward the upper surface from the bottom surface of the substrate, wherein the first recess and the second recess have a different depth from the bottom surface of the substrate, wherein the first recess is formed along a transverse direction and a longitudinal direction in the bottom surface of the substrate, and wherein the first recess and the second recess have a depth smaller than a thickness of the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A semiconductor light emitting device, comprising:
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a substrate; a light emitting structure on an upper surface of the substrate and comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and second conductive semiconductor layer; and a first semiconductor layer between the substrate and a bottom surface of the light emitting structure, wherein a bottom surface of the substrate includes a first portion and a second portion around the first portion, wherein the first portion includes a first recess and the second portion includes a second recess, wherein the first recess and the second recess are formed in a direction toward the upper surface from the bottom surface of the substrate, wherein the first recess and the second recess have a different depth from the bottom surface of the substrate, wherein the first recess is formed along a transverse direction and a longitudinal direction in the bottom surface of the substrate, and wherein the first recess and the second recess have a depth smaller than a thickness of the substrate. - View Dependent Claims (16, 17, 18, 19)
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Specification