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SEMICONDUCTOR ELEMENT HAVING HIGH BREAKDOWN VOLTAGE

  • US 20130240895A1
  • Filed: 08/09/2012
  • Published: 09/19/2013
  • Est. Priority Date: 03/16/2012
  • Status: Active Grant
First Claim
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1. A semiconductor element having a high breakdown voltage, comprising:

  • a substrate;

    a buffer layer, disposed on the substrate, comprising a first high edge dislocation defect density area;

    a semiconductor composite layer, disposed on the buffer layer, comprising a second high edge dislocation defect density area formed due to the first high edge dislocation defect density area; and

    a bias electrode, disposed on the semiconductor composite layer;

    wherein, the first and second high edge dislocation defect density areas generating a virtual gate effect of defect energy level capturing electrons to form an extended depletion region expanded from the bias electrode at the semiconductor composite layer.

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