CONTACT OR VIA CRITICAL DIMENSION CONTROL WITH NOVEL CLOSED LOOP CONTROL SYSTEM IN CHEMICAL MECHANICAL PLANARIZATION PROCESS

• US 20130241075A1
• Filed: 03/13/2012
• Published: 09/19/2013
• Est. Priority Date: 03/13/2012
• Status: Abandoned Application

• Current Assignee: Macronix International Co., Ltd.
• Original Assignee: Macronix International Co., Ltd.
• Inventors: Yeh, Chin-Tsan, Chen, Chun-Fu, Hung, Yung-Tai, Su, Chin-Ta
• Application Number:
  US13/418,920
• Publication Number:
  US 20130241075A1
• Time in Patent Office: Days
• US Class Current: 257/774
• CPC Class Codes: B24B 37/013 Devices or means for detecting lapping completion
• CPC Class Codes: H01L 21/3212 by chemical mechanical polishing [CMP]
• CPC Class Codes: H01L 21/7684 Smoothing; Planarisation
• CPC Class Codes: H01L 22/12 for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions electrical measurement of diffusions H01L22/14
• CPC Class Codes: H01L 22/20 Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Abstract

Closed loop control may be used to improve uniformity of contact or via critical dimension using chemical mechanical planarization. For example, real-time closed loop control may be used to adjust oxide buffing or over-polishing time in a chemical mechanical planarization process to more uniformly and consistently achieve a target critical dimension of a semiconductor wafer.

Claims

1. A system for finishing a wafer comprising:

a control model;

a finishing tool; and

at least one metrological device,

wherein the control model receives a property attribute of the wafer measured by the at least one metrological device and determines at least one control parameter of the finishing tool.

2. The system of claim 1, wherein the finishing tool is a chemical mechanical planarization tool.

3. The system of claim 2, wherein the property attribute is a contact or via critical dimension.

4. The system of claim 2, wherein the at least one control parameter comprises a polishing recipe.

5. The system of claim 4, wherein the polishing recipe comprises at least one of an oxide buffing time and an over-polishing time.

6. The system of claim 1, wherein the property attribute is at least one of a property attribute for the wafer prior to finishing and a property attribute for the wafer following finishing.

7. The system of claim 1, wherein the property attribute is a metal thickness or a dielectric film thickness.

8. A method for finishing a wafer, comprising:

specifying a target of a property attribute for the wafer;

determining at least one control parameter for a finishing tool using a control model provided with the target of the property attribute;

setting the at least one control parameter for the finishing tool; and

finishing the wafer using the finishing tool.

9. The method of claim 8, wherein the finishing tool is a chemical mechanical planarization tool.

10. The method of claim 9, wherein the property attribute is a contact or via critical dimension.

11. The method of claim 9, wherein the at least one control parameter comprises a polishing recipe.

12. The method of claim 11, wherein the polishing recipe comprises at least one of an oxide buffing time and an over-polishing time.

13. The method of claim 8, further comprising

measuring the property attribute of the wafer at least one of prior to finishing the wafer and after finishing the wafer;

and

providing the property attribute to the control model for use in determining the at least one control parameter.

14. A wafer for a semiconductor prepared by a process comprising:

specifying a target of a property attribute for the wafer;

determining at least one control parameter for a finishing tool using a control model provided with the target of the property attribute;

setting the at least one control parameter for the finishing tool; and

finishing the wafer using the finishing tool.

15. The wafer of claim 14, wherein the finishing tool is a chemical mechanical planarization tool.

16. The wafer of claim 15, wherein the property attribute is a contact or via critical dimension.

17. The wafer of claim 14, wherein the at least one control parameter comprises a polishing recipe.

18. The wafer of claim 17, wherein the polishing recipe comprises at least one of an oxide buffing time and an over-polishing time.

19. The wafer of claim 14, wherein the property attribute is at least one of a property attribute for the wafer prior to finishing and a property attribute for the wafer following finishing.

20. The wafer of claim 14, wherein the property attribute is a metal thickness or a dielectric film thickness.