NON-VOLATILE MEMORY DEVICES, OPERATING METHODS THEREOF AND MEMORY SYSTEMS INCLUDING THE SAME
First Claim
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1. A nonvolatile memory device comprising:
- a substrate;
a plurality of memory cell groups arranged in rows and columns on the substrate, each memory cell group including a plurality of memory cells stacked along a vertical direction to the substrate;
a plurality of bit lines;
a read and write circuit connected to the columns of the plurality of memory cell groups through the plurality of bit lines respectively;
a plurality of word lines connected to the plurality of memory cells of each memory cell group, respectively;
a wordline driver connected to the rows of the plurality of memory cell groups through the plurality of word lines,the wordline driver being configured, during a program operation, to apply a program voltage to a selected word line among the plurality of word lines and to apply pass voltages to unselected word lines among the plurality of word lines,the wordline driver being configured, during the program operation, to apply a first program voltage to a first word line among the plurality of word lines if the first word line is selected and to apply a second program voltage to a second word line among the plurality of word lines if the second word line is selected,the second program voltage being lower the first program voltage, andthe second word line being closer to the substrate than the first word line,the word line driver being configured, during the program operation, to apply a first pass voltage to a first unselected word line among the plurality of word lines and to apply a second pass voltage to a second unselected word line among the plurality of word lines,the second pass voltage being lower than the first pass voltage,the second unselected word line being closer to the substrate than the first unselected word line,the wordline driver being configured, during a loop of the program operation, to increase the first program voltage by a first increment if the first word line is selected and to increase the second program voltage by a second increment if the second word line is selected,the second increment being lower than the first increment.
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Abstract
Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.
67 Citations
20 Claims
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1. A nonvolatile memory device comprising:
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a substrate; a plurality of memory cell groups arranged in rows and columns on the substrate, each memory cell group including a plurality of memory cells stacked along a vertical direction to the substrate; a plurality of bit lines; a read and write circuit connected to the columns of the plurality of memory cell groups through the plurality of bit lines respectively; a plurality of word lines connected to the plurality of memory cells of each memory cell group, respectively; a wordline driver connected to the rows of the plurality of memory cell groups through the plurality of word lines, the wordline driver being configured, during a program operation, to apply a program voltage to a selected word line among the plurality of word lines and to apply pass voltages to unselected word lines among the plurality of word lines, the wordline driver being configured, during the program operation, to apply a first program voltage to a first word line among the plurality of word lines if the first word line is selected and to apply a second program voltage to a second word line among the plurality of word lines if the second word line is selected, the second program voltage being lower the first program voltage, and the second word line being closer to the substrate than the first word line, the word line driver being configured, during the program operation, to apply a first pass voltage to a first unselected word line among the plurality of word lines and to apply a second pass voltage to a second unselected word line among the plurality of word lines, the second pass voltage being lower than the first pass voltage, the second unselected word line being closer to the substrate than the first unselected word line, the wordline driver being configured, during a loop of the program operation, to increase the first program voltage by a first increment if the first word line is selected and to increase the second program voltage by a second increment if the second word line is selected, the second increment being lower than the first increment. - View Dependent Claims (2, 3, 4)
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5. A nonvolatile memory device comprising:
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a substrate; a plurality of memory cell groups arranged in rows and columns on the substrate, each memory cell group including a plurality of memory cells stacked along a vertical direction to the substrate; a plurality of bit lines; a read and write circuit connected to the columns of the plurality of memory cell groups through the plurality of bit lines respectively; and a plurality of word lines connected to the plurality of memory cells of each memory cell group, respectively; a wordline driver connected to the rows of the plurality of memory cell groups through the plurality of word lines, the word line driver being configured, during a read operation, to apply a select read voltage to a selected word line among the plurality of word lines and to apply unselected read voltages to unselected word lines among the plurality of word lines, the wordline driver being configured, during the read operation, to apply a first unselect read voltage to a first unselected word line among the plurality of wordlines and to apply a second unselect read voltage a second unselected word line among the plurality of word lines, the second select read voltage being lower than the first unselect read voltage, and the second unselected wordline being closer to the substrate than the first unselected word line. - View Dependent Claims (6)
the wordline driver is configured to apply different unselect read voltages to the plurality of wordlines in different wordline groups, and the wordline driver to configured to apply a same unselect read voltage to the plurality of wordlines in a same wordline group.
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7. A nonvolatile memory device comprising:
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a substrate; a plurality of memory cell groups arranged in rows and columns on a substrate, each memory cell group including a plurality of memory cells stacked along a vertical direction to the substrate; a plurality of bit lines; a read and write circuit connected to columns of the plurality of memory cell groups through the plurality of bit lines respectively; a plurality of wordlines connected to the plurality of memory cells of each memory cell group, respectively; a wordline driver connected to the rows of the plurality of memory cell groups through the plurality of word lines, the wordline driver being configured, during an erase operation, to apply wordline erase voltages to the plurality of word lines, the word line driver being configured, during the erase operation, to apply a first wordline erase voltage to a first word line among the plurality of word lines and to apply a second wordline erase voltage to a second word line among the plurality of wordlines, the second wordline erase voltage being higher than the first word line erase voltage, the second wordline being closer to the substrate than the first word line. - View Dependent Claims (8)
the wordline driver is configured to apply different wordline erase voltages to the plurality of wordlines in different wordline groups, and the word line driver is configured to apply a same wordline erase voltage to the plurality of wordlines in a same wordline group.
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9. A memory system comprising:
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a controller and a nonvolatile memory device, the controller being configured to control program, read and erase operations of the nonvolatile memory device, the nonvolatile memory device including, a substrate; a plurality of memory cell groups arranged in rows and columns on the substrate, each memory cell group including a plurality of memory cells stacked along a vertical direction to the substrate, a plurality of bitlines, a read and write circuit connected to the columns of the plurality of memory cell groups through the plurality of bit lines respectively, and a plurality of word lines connected to the plurality of memory cells of each memory cell group, respectively, and a wordline driver connected to rows of the plurality of memory cell groups through the plurality of word lines, the plurality of word lines being connected to the plurality of memory cells of each memory cell group respectively, the controller being configured to transfer data to the read and write circuit, control the wordline driver and the read and write circuit to program the transferred data into the memory cell array, to control the read and write circuit and the wordline driver to read data from the memory cell array to the read and write circuit and read the data from the read and write circuit, and to control the wordline driver to erase the plurality of memory cells, and the wordline driver is configured, under control of the controller, to apply a first voltage to a first word line among the plurality of word lines and a second voltage to a second word line among the plurality of word lines, the second voltage being different than the first voltage, the second word being closer to the substrate than the first word line. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification