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NON-VOLATILE MEMORY DEVICES, OPERATING METHODS THEREOF AND MEMORY SYSTEMS INCLUDING THE SAME

  • US 20130242667A1
  • Filed: 04/22/2013
  • Published: 09/19/2013
  • Est. Priority Date: 02/17/2010
  • Status: Active Grant
First Claim
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1. A nonvolatile memory device comprising:

  • a substrate;

    a plurality of memory cell groups arranged in rows and columns on the substrate, each memory cell group including a plurality of memory cells stacked along a vertical direction to the substrate;

    a plurality of bit lines;

    a read and write circuit connected to the columns of the plurality of memory cell groups through the plurality of bit lines respectively;

    a plurality of word lines connected to the plurality of memory cells of each memory cell group, respectively;

    a wordline driver connected to the rows of the plurality of memory cell groups through the plurality of word lines,the wordline driver being configured, during a program operation, to apply a program voltage to a selected word line among the plurality of word lines and to apply pass voltages to unselected word lines among the plurality of word lines,the wordline driver being configured, during the program operation, to apply a first program voltage to a first word line among the plurality of word lines if the first word line is selected and to apply a second program voltage to a second word line among the plurality of word lines if the second word line is selected,the second program voltage being lower the first program voltage, andthe second word line being closer to the substrate than the first word line,the word line driver being configured, during the program operation, to apply a first pass voltage to a first unselected word line among the plurality of word lines and to apply a second pass voltage to a second unselected word line among the plurality of word lines,the second pass voltage being lower than the first pass voltage,the second unselected word line being closer to the substrate than the first unselected word line,the wordline driver being configured, during a loop of the program operation, to increase the first program voltage by a first increment if the first word line is selected and to increase the second program voltage by a second increment if the second word line is selected,the second increment being lower than the first increment.

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